Device type
Generic number 1/
Circuit function
Access time
100 ns
85 ns
70 ns
55 ns
45 ns
35 ns
25 ns
20 ns
20 ns
20 ns
15 ns
70 ns
70 ns
15 ns
12 ns
12 ns
30 ns
31
32
33
34
35
36
37
38
39
40
41
42
43
44
45
46
47
128K x 8 standard power CMOS SRAM dual CE
128K x 8 standard power CMOS SRAM dual CE
128K x 8 standard power CMOS SRAM dual CE
128K x 8 standard power CMOS SRAM dual CE
128K x 8 standard power CMOS SRAM dual CE
128K x 8 standard power CMOS SRAM dual CE
128K x 8 standard power CMOS SRAM dual CE
128K x 8 standard power CMOS SRAM dual CE
128K x 8 standard power CMOS SRAM
128K x 8 low power CMOS SRAM
128K x 8 standard power CMOS SRAM dual CE
128K x 8 low power CMOS SRAM
128K x 8 standard power CMOS SRAM
128K x 8 standard power CMOS SRAM
128K x 8 standard power CMOS SRAM dual CE
128K x 8 standard power CMOS SRAM
128K x 8 very low power CMOS SRAM
1.2.3 Device class designator. The device class designator is a single letter identifying the product assurance level as
follows:
Device class
M
Device requirements documentation
Vendor self-certification to the requirements for MIL-STD-883 compliant,
non-JAN class level B microcircuits in accordance with MIL-PRF-38535,
appendix A
Q or V
Certification and qualification to MIL-PRF-38535
1.2.4 Case outlines. The case outlines are as designated in MIL-STD-1835 and as follows:
Outline letter
X
Descriptive designator
Terminals
Package style
dual-in-line
SOJ package
dual-in-line
rectangular chip carrier
flat pack
rectangular chip carrier
rectangular chip carrier
J-leaded rectangular chip carrier
zig-zag in-line
GDIP1-T32 or CDIP2-T32
See figure 1
See figure 1
See figure 1
See figure 1
See figure 1
CQCC1-N32
See figure 1
See figure 1
See figure 1
32
32
32
32
32
32
32
32
32
32
Y
Z
U
T
N
M
9
2/
8
7
SOJ package
1.2.5 Lead finish. The lead finish is as specified in MIL-PRF-38535 for device classes Q and V or MIL-PRF-38535,
appendix A for device class M.
1.3 Absolute maximum ratings. 3/ 4/
Supply voltage range (V ) ........................................
-0.5 V dc to +7.0 V dc
-0.5 V dc to V +0.5 V dc 5/
-0.5 V dc to V +0.5 V dc 5/
CC
-65 C to +150 C
1.0 W
CC
DC input voltage range (V ).......................................
IN
CC
DC output voltage range (V
Storage temperature range..........................................
).................................
OUT
Maximum power dissipation (P ) ................................
D
Lead temperature (soldering, 10 seconds) ..................
+260 C
1/ Generic numbers are listed on the Standard Microcircuit Drawing Source Approval Bulletin at the end of this document
and will also be listed in MIL-HDBK-103.
2/ A bottom brazed option for this package now exists (See figure 1, case outline Y NOTE:). Customers may specify in the
purchase order to negate the option as acceptable for their use.
3/ Stresses above the absolute maximum rating may cause permanent damage to the device. Extended operation at the
maximum levels may degrade performance and affect reliability.
4/ All voltages referenced to V
(V = ground) unless otherwise specified.
SS SS
5/ Negative undershoots to a minimum of -3.0 V are allowed with a maximum of 20 ns pulse width.
SIZE
STANDARD
MICROCIRCUIT DRAWING
5962-89598
A
DEFENSE SUPPLY CENTER COLUMBUS
COLUMBUS, OHIO 43216-5000
REVISION LEVEL
L
SHEET
3
DSCC FORM 2234
APR 97
TEMIC [ TEMIC SEMICONDUCTORS ]
