TABLE I. Electrical performance characteristics Continued.
Test
Symbol
Conditions
-55 C +125 C
= 0 V; 4.5 V 5.5 V
unless otherwise specified
Group A
subgroups
Device
types
Limits
Max
Unit
mA
T
C
Min
V
V
CC
SS
Standby supply current
TTL
I
I
I
1, 2, 3
47
2
CC2
CC3
CC4
V
= 5.5 V, CE = V
CC
IH
CE = V , f = 0 Hz
01-04,
42
10
2
IL
05-40,
43
25
41
40
60
2/
44-46
All
M,D,P
1 1/
Standby supply current
CMOS
1, 2, 3
47
42
0.3
1
mA
V
-0.2 V
V
= 5.5 V, CE
CC
CC
Inputs = V or V , f = 0
IH IL
01-04,
40,43
5
05-39,
41
10
44-46
All
15
2/
M,D,P
1 1/
Data retention current
V
= 2.0 V, f = 0
1, 2, 3
01-04
05-21
40
2
mA
A
CC
CE
inputs = 0.2 V or V
V
- 0.2 V, all other
1
CC
- 0.2 V
CC
750
400
150
2/
42
47
M,D,P
1 1/
4
All
01-38,
41-47
12
Input capacitance 3/
(A0 - A16)
C
IN
V
= 0 V, f = 1.0 MHz
IN
= +25 C, see 4.4.1e
pF
T
C
39, 40
5
01-38,
41-47
20
Input capacitance 3/
( CE , WE , OE )
C
C
V
T
= 0 V, f = 1.0 MHz
OUT
4
4
pF
pF
CLK
= +25 C, see 4.4.1e
C
39, 40
5
01-38,
41-47
14
Output capacitance 3/
V
= 0 V, f = 1.0 MHz
OUT
OUT
T
C
= +25 C, see 4.4.1e
39, 40
5
See footnotes at end of table.
SIZE
STANDARD
5962-89598
A
MICROCIRCUIT DRAWING
DEFENSE SUPPLY CENTER COLUMBUS
COLUMBUS, OHIO 43216-5000
REVISION LEVEL
L
SHEET
9
DSCC FORM 2234
APR 97
TEMIC [ TEMIC SEMICONDUCTORS ]
