IRFZ44N
N-CHANNEL Power MOSFET
!
Figure 12. Typical Threshold Voltage vs
Junction Temperature
Figure 11. Typical Breakdown Voltage vs
Junction Temperature
1.20
1.15
1.10
1.05
1.00
1.2
1.1
1.0
0.9
0.8
0.7
0.6
0.5
0.95
0.90
V
GS = 0V
VGS = VDS
ID = 250 µA
ID = 250 µA
-75 -50 -25 0.0 25 50 75 100 125 150 175
-75 -50 -25 0.0 25 50 75 100 125 150 175
o
o
T , Junction Temperature ( C)
J
T , Junction Temperature ( C)
J
Figure 13. Maximum Forward Bias Safe
Operating Area
Figure 14. Typical Capacitance
vs Drain-to-Source Voltage
3000
2500
2000
1000
V
= 0V, f = 1MHz
GS
iss
oss
rss
OPERATION IN THIS AREA MAY BE LIMITED BY RDS(ON)
C
C
C
= C + C
gs
# C + C
ds
= C
gd
gd
10µs
C
iss
gd
100
µ
100
1500
1000
500
0
C
C
oss
1.0m
10
1
10ms
DC
T
= MAX RATED, T = 25 oC
C
J
rss
Single Pulse
10
100
0.01
0.1
1
10
100
1
V
, Drain-to-Source Voltage (V)
DS
V
, Drain Voltage (V)
DS
Figure 15. Typical Gate Charge
vs Gate-to-Source Voltage
Figure 16. Typical Body Diode Transfer
Characteristics
180
160
140
120
12
10
8
V
V
V
=45V
=30V
=15V
DS
DS
DS
150 o
C
100
80
60
40
20
0
6
4
2
0
I
= 59A
35
V
= 0V
GS
D
0
5
10
15
20
25
30
40
0.3
0.5
0.7
0.9
1.1
1.3
Q ,Total Gate Charge (nC)
G
V
, Source-to-Drain Voltage (V)
SD
Page 5
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