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IRFZ44N 参数 Datasheet PDF下载

IRFZ44N图片预览
型号: IRFZ44N
PDF下载: 下载PDF文件 查看货源
内容描述: N沟道功率MOSFET [N-CHANNEL Power MOSFET]
分类和应用: 晶体晶体管开关脉冲局域网
文件页数/大小: 5 页 / 137 K
品牌: SUNTAC [ SUNTAC ELECTRONIC CORP. ]
 浏览型号IRFZ44N的Datasheet PDF文件第1页浏览型号IRFZ44N的Datasheet PDF文件第2页浏览型号IRFZ44N的Datasheet PDF文件第3页浏览型号IRFZ44N的Datasheet PDF文件第5页  
IRFZ44N  
N-CHANNEL Power MOSFET  
!
Figure 6. Maximum Peak Current Capability  
10000  
FOR TEMPERATURES  
ABOVE 25 oC DERATE PEAK  
CURRENT AS FOLLOWS:  
TRANSCONDUCTANCE  
MAY LIMIT CURRENT IN  
THIS REGION  
1000  
100  
150 – T  
C
----------------------  
125  
I = I  
25  
10  
1
VGS = 10V  
1E-6  
10E-6  
100E-6  
1E-3  
10E-3  
100E-3  
1E+0  
10E+0  
t , Pulse Width (s)  
p
Figure 8. Unclamped Inductive Switching Capability  
Figure 7. Typical Transfer Characteristics  
40  
35  
30  
25  
20  
15  
10  
5
1000  
PULSE DURATION = 250 µs  
DUTY CYCLE = 0.5% MAX  
If Rz 0: t = (L/R) ln[(I ×R)/(1.3BV  
If R= 0: t = (L×I )/(1.3BV -V )  
AV AS DSS DD  
-V )+1]  
AV AS DSS DD  
V
= 10 V  
DS  
R equals total Series resistance of Drain circuit  
100  
10  
1
STARTING T = 25oC  
J
STARTING T = 150oC  
J
+175 oC  
+25oC  
-55oC  
0
1.5  
2.0  
2.5  
3.0  
3.5  
4.0  
1E-6  
10E-6  
100E-6  
1E-3  
10E-3  
100E-3  
V
, Gate-to-Source Voltage ( )  
V
t , Time in Avalanche (s)  
AV  
GS  
Figure 10. Typical Drain-to-Source  
vs Junction Temperature  
Figure 9. Typical Drain-to-Source ON Resistance  
vs Drain Current  
Resistance  
ON  
2.5  
50  
PULSE DURATION = 10 µs  
DUTY CYCLE = 0.5% MAX  
T =25°C  
C
2.0  
1.5  
40  
30  
20  
10  
1.0.  
0.5  
PULSE DURATION = 250 µs  
DUTY CYCLE = 0.5% MAX  
V
=10V  
GS  
V
= 10V, I = 15A  
GS D  
0
50  
100  
150  
200  
250  
-75 -50 -25  
0
25 50 75 100 125 150 175  
o
I , Drain Current (A)  
D
T , Junction Temperature (  
J
)
C
Page 4  
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