IRFZ44N
N-CHANNEL Power MOSFET
!
ORDERING INFORMATION
Part Number
Package
....................IRFZ44N................................................TO-220
ELECTRICAL CHARACTERISTICS
Unless otherwise specified, TJ = 25к.
cIRFZ44N
Characteristic
Symbol
Min
Typ
Max
Units
OFF Characteristics
Drain-to-Source Breakdown Voltage
(VGS = 0 V, ID = 250 µA)
VDSS
ӔVDSS/ǻTJ
IDSS
55
... V
.V/к
µA
Breakdown Voltage Temperature Coefficient
(Reference to 25к, ID = 1mA)
Drain-to-Source Leakage Current
(VDS = 55 V, VGS = 0 V, TJ = 25к)
(VDS = 44 V, VGS = 0 V, TJ = 150к)
Gate-to-Source Forward Leakage
(VGS = 20 V)
0.058
25
250
100
IGSS
nA
nA
Gate-to-Source Reverse Leakage
(VGS = -20 V)
IGSS
-100
...4.0
17.5
ON Characteristics
Gate Threshold Voltage
VGS(th)
RDS(on)
gFS
2.0
V
mȍ
S
(VDS = VGS, ID = 250 µA)
Static Drain-to-Source On-Resistance (Note 4)
(VGS = 10 V, ID = 25A)
Forward Transconductance (VDS = 25 V, ID = 25A) (Note 4)
19
Dynamic Characteristics
Input Capacitance
Ciss
Coss
Crss
Qg
1470
360
88
pF
pF
(VDS = 25 V, VGS = 0 V,
Output Capacitance
f = 1.0 MHz)
pF
Reverse Transfer Capacitance
Total Gate Charge
.63
14
.nC
nC
(VDS = 44 V, ID = 25 A,
VGS = 10 V) (Note 2)
Gate-to-Source Charge
Gate-to-Drain (“Miller”) Charge
Qgs
Qgd
nC
23
Resistive Switching Characteristics
Turn-On Delay Time
Rise Time
td(on)
.12
60
.. ns
ns
(VDD = 28 V, ID = 25 A,
trise
VGS = 10 V,
ns
ns
Turn-Off Delay Time
Fall Time
td(off)
.................44
.................45
RG = 12ȍ) (Note 4)
tfall
Source-Drain Diode Characteristics
IS
Continuous Source Current
(Body Diode)
...............50
A
Integral pn-diode in MOSFET
Pulse Source Current (Body Diode)
Diode Forward On-Voltage
Reverse Recovery Time
Reverse Recovery Charge
(Note 1)
ISM
VSD
trr
...............160
...............1.3
A
V
(IS = 25A, VGS = 0 V) (Note 4)
(IF = 25A, VGS = 0 V,
63...............95.
170..............260
ns
nC
di/dt = 100A/µs) (Note 4)
Qrr
Notes:
ISD ≤ 25A, di/dt ≤ 230A/µs, VDD ≤ V(BR)DSS
TJ ≤ 175°C
,
Repetitive rating; pulse width limited by
max. junction temperature. (See fig. 1)
Pulse width ≤ 400µs; duty cycle ≤ 2%.
ꢀ
Essentially independent of operating temerpature
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