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IRFZ44N 参数 Datasheet PDF下载

IRFZ44N图片预览
型号: IRFZ44N
PDF下载: 下载PDF文件 查看货源
内容描述: N沟道功率MOSFET [N-CHANNEL Power MOSFET]
分类和应用: 晶体晶体管开关脉冲局域网
文件页数/大小: 5 页 / 137 K
品牌: SUNTAC [ SUNTAC ELECTRONIC CORP. ]
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IRFZ44N  
N-CHANNEL Power MOSFET  
!
ORDERING INFORMATION  
Part Number  
Package  
....................IRFZ44N................................................TO-220  
ELECTRICAL CHARACTERISTICS  
Unless otherwise specified, TJ = 25к.  
cIRFZ44N  
Characteristic  
Symbol  
Min  
Typ  
Max  
Units  
OFF Characteristics  
Drain-to-Source Breakdown Voltage  
(VGS = 0 V, ID = 250 µA)  
VDSS  
ӔVDSS/ǻTJ  
IDSS  
55  
... V  
.V/к  
µA  
Breakdown Voltage Temperature Coefficient  
(Reference to 25к, ID = 1mA)  
Drain-to-Source Leakage Current  
(VDS = 55 V, VGS = 0 V, TJ = 25к)  
(VDS = 44 V, VGS = 0 V, TJ = 150к)  
Gate-to-Source Forward Leakage  
(VGS = 20 V)  
0.058  
25  
250  
100  
IGSS  
nA  
nA  
Gate-to-Source Reverse Leakage  
(VGS = -20 V)  
IGSS  
-100  
...4.0  
17.5  
ON Characteristics  
Gate Threshold Voltage  
VGS(th)  
RDS(on)  
gFS  
2.0  
V
mȍ  
S
(VDS = VGS, ID = 250 µA)  
Static Drain-to-Source On-Resistance (Note 4)  
(VGS = 10 V, ID = 25A)  
Forward Transconductance (VDS = 25 V, ID = 25A) (Note 4)  
19  
Dynamic Characteristics  
Input Capacitance  
Ciss  
Coss  
Crss  
Qg  
1470  
360  
88  
pF  
pF  
(VDS = 25 V, VGS = 0 V,  
Output Capacitance  
f = 1.0 MHz)  
pF  
Reverse Transfer Capacitance  
Total Gate Charge  
.63  
14  
.nC  
nC  
(VDS = 44 V, ID = 25 A,  
VGS = 10 V) (Note 2)  
Gate-to-Source Charge  
Gate-to-Drain (“Miller”) Charge  
Qgs  
Qgd  
nC  
23  
Resistive Switching Characteristics  
Turn-On Delay Time  
Rise Time  
td(on)  
.12  
60  
.. ns  
ns  
(VDD = 28 V, ID = 25 A,  
trise  
VGS = 10 V,  
ns  
ns  
Turn-Off Delay Time  
Fall Time  
td(off)  
.................44  
.................45  
RG = 12ȍ) (Note 4)  
tfall  
Source-Drain Diode Characteristics  
IS  
Continuous Source Current  
(Body Diode)  
...............50  
A
Integral pn-diode in MOSFET  
Pulse Source Current (Body Diode)  
Diode Forward On-Voltage  
Reverse Recovery Time  
Reverse Recovery Charge  
(Note 1)  
ISM  
VSD  
trr  
...............160  
...............1.3  
A
V
(IS = 25A, VGS = 0 V) (Note 4)  
(IF = 25A, VGS = 0 V,  
63...............95.  
170..............260  
ns  
nC  
di/dt = 100A/µs) (Note 4)  
Qrr  
Notes:  
ƒ ISD 25A, di/dt 230A/µs, VDD V(BR)DSS  
TJ 175°C  
,
 Repetitive rating; pulse width limited by  
max. junction temperature. (See fig. 1)  
„ Pulse width 400µs; duty cycle 2%.  
‚ Essentially independent of operating temerpature  
†
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