IRFZ44N
N-CHANNEL Power MOSFET
!
Figure 1. Maximum Effective Thermal Impedance, Junction-to-Case
Duty Cycle
50%
1.000
0.100
20%
10%
2%
PDM
t1
1%
t2
0.010
0.001
single pulse
NOTES:
DUTY FACTOR: D=t1/t2
PEAK T =P x Z x R +T
C
J
DM
TJC
TJC
1E-05
1E-04
1E-03
1E-02
1E-01
1E+00
1E+01
t , Rectangular Pulse Duration (s)
p
Figure 2. Maximum Power Dissipation
vs Case Temperature
Figure 3. Maximum Continuous Drain Current
vs Case Temperature
70
140
120
60
50
40
100
80
30
60
40
20
10
0
20
0
175
175
25
75
125
50
25
100
150
50
75
100
125
150
o
o
T , Case Temperature (
C
)
T , Case Temperature (
C
)
C
C
Figure 5. Typical Drain-to-Source ON Resistance
vs Gate Voltage and Drain Current
50
Figure 4. Typical Output Characteristics
220
200
180
160
140
120
100
PULSE DURATION = 250 µS
DUTY CYCLE = 0.5% MAX
T
= 25 oC
45
C
V
V
=
15V
GS
= 10V
GS
I
I
= 14A
= 28A
40
35
30
25
20
D
D
V
= 8V
GS
I
= 55 A
D
V
= 6V
GS
80
60
VGS = 4.5V
PULSE DURATION = 250 µS
DUTY CYCLE = 0.5% MAX
= 25 oC
VGS = 4V
T
C
40
20
V
GS = 3.5V
GS = 3V
V
15
0
3
4
5
5
0
10
6
7
8
9
10
V
, Drain-to-Source Voltage ( )
V
V
, Gate-to-Source Voltage ( )
V
DS
GS
Page 3
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