W12NK90Z 参数 Datasheet PDF下载

型号：	W12NK90Z
PDF下载：	下载PDF文件查看货源
内容描述：	N沟道900V - 0.72欧姆 - 11A TO- 247齐纳保护超网功率MOSFET [N-CHANNEL 900V - 0.72 ohm - 11A TO-247 Zener-Protected SuperMESH Power MOSFET]
分类和应用：
文件页数/大小：	14 页 / 268 K
品牌：	STMICROELECTRONICS [ ST ]

Electrical ratings

STW12NK90Z

1.1

Protection features of gate-to-source zener diodes

The built-in back-to-back Zener diodes have specifically been designed to enhance not only

the device’s ESD capability, but also to make them safely absorb possible voltage transients

that may occasionally be applied from gate to source. In this respect the Zener voltage is

appropriate to achieve an efficient and cost-effective intervention to protect the device’s

integrity. These integrated Zener diodes thus avoid the usage of external components.

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