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W12NK90Z 参数 Datasheet PDF下载

W12NK90Z图片预览
型号: W12NK90Z
PDF下载: 下载PDF文件 查看货源
内容描述: N沟道900V - 0.72欧姆 - 11A TO- 247齐纳保护超网功率MOSFET [N-CHANNEL 900V - 0.72 ohm - 11A TO-247 Zener-Protected SuperMESH Power MOSFET]
分类和应用:
文件页数/大小: 14 页 / 268 K
品牌: STMICROELECTRONICS [ ST ]
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STW12NK90Z  
Electrical characteristics  
2
Electrical characteristics  
(T  
=25°C unless otherwise specified)  
CASE  
Table 5.  
Symbol  
On/off states  
Parameter  
Test conditions  
Min.  
Typ.  
Max.  
Unit  
Drain-source  
V(BR)DSS  
ID = 1mA, VGS =0  
900  
V
breakdown voltage  
V
DS = max rating  
Zero gate voltage  
1
µA  
µA  
IDSS  
VDS = max rating,  
TC = 125°C  
drain current (VGS = 0)  
50  
Gate-body leakage  
current (VDS = 0)  
IGSS  
VGS  
VDS = VGS, ID = 100µA  
GS = 10V, ID = 5.5A  
=
20V  
10  
4.5  
µA  
V
VGS(th)  
RDS(on)  
Gate threshold voltage  
3
3.75  
0.72  
Static drain-source on  
resistance  
V
0.88  
Table 6.  
Symbol  
Dynamic  
Parameter  
Test conditions  
Min.  
Typ.  
Max.  
Unit  
Forward  
transconductance  
(1)  
gfs  
VDS = 15V I = 5.5A  
11  
S
, D  
Input capacitance  
Output capacitance  
Ciss  
Coss  
Crss  
3500  
280  
58  
pF  
pF  
pF  
VDS = 25V, f = 1MHz,  
VGS = 0  
Reverse transfer  
capacitance  
VGS = 0V, VDS = 0V  
to 800V  
Equivalent output  
capacitance  
(2)  
Coss eq  
117  
pF  
td(on)  
tr  
td(off)  
tf  
Turn-on delay time  
Rise time  
31  
20  
88  
55  
ns  
ns  
ns  
ns  
VDD = 450V, ID = 5A  
RG = 4.7VGS = 10V  
(see Figure 13)  
Turn-off delay time  
Fall time  
Qg  
Qgs  
Qgd  
Total gate charge  
Gate-source charge  
Gate-drain charge  
VDD = 720V, ID = 10A,  
VGS = 10V, RG = 4.7Ω  
(see Figure 14)  
113  
19  
152  
nC  
nC  
nC  
60  
1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.  
2. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS  
increases from 0 to 80% VDSS  
.
5/14  
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