STW12NK90Z
Electrical characteristics
2
Electrical characteristics
(T
=25°C unless otherwise specified)
CASE
Table 5.
Symbol
On/off states
Parameter
Test conditions
Min.
Typ.
Max.
Unit
Drain-source
V(BR)DSS
ID = 1mA, VGS =0
900
V
breakdown voltage
V
DS = max rating
Zero gate voltage
1
µA
µA
IDSS
VDS = max rating,
TC = 125°C
drain current (VGS = 0)
50
Gate-body leakage
current (VDS = 0)
IGSS
VGS
VDS = VGS, ID = 100µA
GS = 10V, ID = 5.5A
=
20V
10
4.5
µA
V
VGS(th)
RDS(on)
Gate threshold voltage
3
3.75
0.72
Static drain-source on
resistance
V
0.88
Ω
Table 6.
Symbol
Dynamic
Parameter
Test conditions
Min.
Typ.
Max.
Unit
Forward
transconductance
(1)
gfs
VDS = 15V I = 5.5A
11
S
, D
Input capacitance
Output capacitance
Ciss
Coss
Crss
3500
280
58
pF
pF
pF
VDS = 25V, f = 1MHz,
VGS = 0
Reverse transfer
capacitance
VGS = 0V, VDS = 0V
to 800V
Equivalent output
capacitance
(2)
Coss eq
117
pF
td(on)
tr
td(off)
tf
Turn-on delay time
Rise time
31
20
88
55
ns
ns
ns
ns
VDD = 450V, ID = 5A
RG = 4.7Ω VGS = 10V
(see Figure 13)
Turn-off delay time
Fall time
Qg
Qgs
Qgd
Total gate charge
Gate-source charge
Gate-drain charge
VDD = 720V, ID = 10A,
VGS = 10V, RG = 4.7Ω
(see Figure 14)
113
19
152
nC
nC
nC
60
1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
2. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS
increases from 0 to 80% VDSS
.
5/14