STW12NK90Z
Electrical ratings
1
Electrical ratings
Table 1.
Symbol
Absolute maximum ratings
Parameter
Value
Unit
VDS
VGS
ID
Drain-source voltage (VGS = 0)
Gate- source voltage
900
30
V
V
Drain current (continuous) at TC = 25°C
Drain current (continuous) at TC = 100°C
Drain current (pulsed)
11
A
ID
7
A
(1)
IDM
Ptot
44
A
Total dissipation at TC = 25°C
Derating Factor
230
1.85
6000
4.5
W
W/°C
V
VESD(G-S)
Gate source ESD(HBM-C=100pF, R=1.5KΩ)
Single pulse avalanche energy
Storage temperature
(2)
EAS
mJ
Tstg
Tj
-55 to 150
°C
Max. operating junction temperature
1. Pulse width limited by safe operating area.
2. ISD ≤11A, di/dt ≤200A/µs, VDD ≤V(BR)DSS, Tj ≤TJMAX.
Table 2.
Thermal data
Rthj-case Thermal resistance junction-case max
0.54
50
°C/W
°C/W
°C
Rthj-amb Thermal resistance junction-ambient max
TJ
Maximum lead temperature for soldering purpose
300
Table 3.
Symbol
Avalanche characteristics
Parameter
Max value
Unit
Avalanche current, repetitive or not-repetitive
(pulse width limited by Tj max)
IAR
11
A
Single pulse avalanche energy
EAS
500
mJ
(starting Tj = 25 °C, ID = IAR, VDD = 50 V)
Table 4.
Symbol
Gate-source zener diode
Parameter
Test conditions
Min.
Typ.
Max. Unit
Gate-source breakdown
voltage
BVGSO
Igs= 1mA (open drain)
30
V
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STMICROELECTRONICS [ ST ]
