Characteristics
T835H, T850H
Figure 3.
RMS on-state current versus
Figure 4.
Variation of thermal impedance
ambient temperature (Epoxy
printed circuit board FR4,
copper thickness = 35 µm)
versus pulse duration
I
T(RMS) (A)
Zth(°C/W)
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
1.0E+02
1.0E+01
1.0E+00
1.0E-01
α=180 °
Zth(j-a)
D²PAK
SCU=1 cm²
Zth(j-c)
tP(s)
Tamb(°C)
75
1.0E-03
1.0E-02
1.0E-01
1.0E+00 1.0E+01
1.0E+02 1.0E+03
0
25
50
100
125
150
Figure 5.
On-state characteristics (maximum Figure 6.
values)
Surge peak on-state current versus
number of cycles
ITM(A)
100
I
TSM(A)
90
80
70
60
50
40
30
20
10
0
t=20ms
Non repetitive
Tj initial=25 °C
One cycle
Tj=150 °C
10
Repetitive
Tc=125 °C
Tj=25 °C
Tj max. :
Vt0 = 0.80 V
Rd = 52 mΩ
VTM(V)
2.0 2.5
Number of cycles
1
1
10
100
1000
0.0
0.5
1.0
1.5
3.0
3.5
4.0
4.5
Figure 7.
Non-repetitive surge peak on-state Figure 8.
current for a sinusoidal pulse with
Relative variation of gate trigger
current, holding current and
latching current versus junction
temperature (typical values)
width t < 10 ms and corresponding
p
2
value of I t
IGT, IH, IL [Tj] / IGT, IH, IL [Tj=25°C]
I
TSM(A), I²t (A²s)
2.5
2.0
1.5
1.0
0.5
0.0
10000
1000
100
Tj initial=25 °C
dI/dt limitation: 50 A/µs
IGT
IH & IL
ITSM
I²t
tP(ms)
Tj(°C)
60
10
0.01
0.10
1.00
10.00
-40
-20
0
20
40
80
100
120
140
160
4/10
STMICROELECTRONICS [ ST ]
