T835H, T850H
Characteristics
Table 3.
Symbol
Static Characteristics
Test Conditions
Tj = 25° C
Value
Unit
(1)
(1)
(1)
VT
Vt0
Rd
ITM = 11 A, tp = 380 µs
Threshold voltage
MAX.
MAX.
MAX.
MAX.
MAX.
MAX.
MAX.
1.5
0.80
52
V
V
Tj = 150° C
Tj = 150° C
Tj = 25° C
Tj = 150° C
Dynamic resistance
mΩ
µA
5
VDRM = VRRM
3.1
2.5
2.0
IDRM
(2)
IRRM
VD/VR = 400 V (at peak mains voltage) Tj = 150° C
VD/VR = 200 V (at peak mains voltage) Tj = 150° C
mA
1. for both polarities of A2 referenced to A1.
2. tp = 380 µs.
Table 4.
Symbol
Thermal resistance
Parameter
Value
Unit
D2PAK / TO-220AB
TO-220AB Ins
D2PAK
1.85
3.7
45
Rth(j-c)
Junction to case (AC)
Junction to ambient
° C/W
S = 1 cm2
Rth(j-a)
TO-220AB / TO-220AB Ins
60
Figure 1.
Maximum power dissipation versus Figure 2.
RMS on-state current (full cycle)
RMS on-state current versus case
temperature (full cycle)
I
T(RMS) (A)
P(W)
10
9
8
7
6
5
4
3
2
1
0
9
8
7
6
5
4
3
2
1
0
TO-220AB/D²PAK
α=180 °
TO-220AB
Insulated
180°
TC(°C)
IT(RMS)(A)
4
0
1
2
3
5
6
7
8
0
25
50
75
100
125
150
3/10
STMICROELECTRONICS [ ST ]
