Characteristics
T835H, T850H
1
Characteristics
Table 1.
Absolute Maximum Ratings
Symbol
Parameter
D2PAK, TO-220AB Tc = 135° C
Value
Unit
IT(RMS)
RMS on-state current (full sine wave)
8
A
TO-220AB Ins
F = 50 Hz
Tc = 125° C
t = 20 ms
80
84
42
Non repetitive surge peak on-state
current (full cycle, Tj initial = 25° C)
ITSM
A
F = 60 Hz
t = 16.7 ms
²
²
²
I t
I t Value for fusing
tp = 10 ms
A s
Critical rate of rise of on-state current
IG = 2 x IGT , tr ≤ 100 ns
dI/dt
F = 120 Hz
Tj = 150° C
Tj = 25° C
50
A/µs
V
Non repetitive surge peak off-state
voltage
V
DRM/VRRM
+ 100
VDSM/VRSM
tp = 10 ms
tp = 20 µs
IGM
Peak gate current
Tj = 150° C
Tj = 150° C
4
1
A
PG(AV)
Average gate power dissipation
W
Tstg
Tj
Storage junction temperature range
Operating junction temperature range
- 40 to + 150
- 40 to + 150
° C
Table 2.
Symbol
Electrical Characteristics (Tj = 25° C, unless otherwise specified)
Value
Test Conditions
Quadrant
Unit
T835H
T850H
(1)
IGT
I - II - III
I - II - III
I - II - III
MAX.
MAX.
MIN.
35
50
mA
V
VD = 12 V RL = 33 Ω
VGT
1.0
VGD
VD = VDRM, RL = 3.3 kΩ
0.15
V
(2)
IH
IT = 500 mA
MAX.
35
50
75
60
mA
I - III
II
IL
IG = 1.2 IGT
MAX.
mA
80
110
1500
14
dV/dt (2)
VD = 67% VDRM, gate open, Tj = 150° C
MIN.
MIN.
1000
11
V/µs
(dI/dt)c (2) Without snubber, Tj = 150° C
A/ms
1. minimum I
GT
is guaranted at 20% of I
max.
GT
2. for both polarities of A2 referenced to A1.
2/10
STMICROELECTRONICS [ ST ]
