STNRGPF01
Electrical characteristics
5.3.3
Memory characteristics
2
Flash program and memory/data E PROM.
General conditions: T = -40 °C to 105 °C.
A
2
Table 10. Flash program memory/data E PROM
Symbol
Parameter
Conditions
Min.(1) Typ.(1) Max.(1) Unit
Standard programming time (including erase)
for byte/word/block (1 byte/4 bytes/128 bytes)
-
-
-
6
3
6.6
3.3
tPROG
Fast programming time for 1 block (128
bytes)
ms
-
tERASE Erase time for 1 block (128 bytes)
Erase/write cycles(2) (program memory)
-
-
3
-
3.3
TA = 25 °C
TA = 85 °C
TA = 105 °C
10 K
100 K
35 K
-
-
-
NWE
-
Cycles
Erase/write cycles(2)(data memory)
-
Data retention (program memory) after 10 K
erase/write cycles at TA = 25 °C
TRET = 85 °C
15
11
15
6
-
-
-
-
-
-
-
Data retention (program memory) after 10 K
T
RET = 105 °C
erase/write cycles at TA = 25 °C
tRET
Years
mA
Data retention (data memory) after 100 K
TRET = 85 °C
TRET = 105 °C
-
erase/write cycles at TA = 85 °C
Data retention (data memory) after 35 K
erase/write cycles at TA = 105 °C
-
Supply current during program and erase
IDDPRG
cycles
-40 ºC TA 105 ºC
-
2
1. Data based on characterization results, not tested in production.
2. The physical granularity of the memory is 4 bytes, so cycling is performed on 4 bytes even when a write/erase operation
addresses a single byte.
5.3.4
Input/output specifications
The STNRGPF01 device includes three different I/O types:
Normal I/Os (O or I)
Fast I/O (OP)
High speed I/O (CLOCK)
The STNRGPF01 I/Os are designed to withstand the current injection. For the negative
injection current of 4 mA, the resulting leakage current in the adjacent input does not exceed
1 µA.
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STMICROELECTRONICS [ ST ]
