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STM8S903K3T6C 参数 Datasheet PDF下载

STM8S903K3T6C图片预览
型号: STM8S903K3T6C
PDF下载: 下载PDF文件 查看货源
内容描述: 16兆赫STM8S 8位MCU ,高达8 KB闪存, 1 KB的RAM , 640字节EEPROM , 10位ADC ,2个定时器, UART , SPI , I²C [16 MHz STM8S 8-bit MCU, up to 8 Kbytes Flash, 1 Kbyte RAM, 640 bytes EEPROM,10-bit ADC, 2 timers, UART, SPI, I²C]
分类和应用: 闪存微控制器和处理器外围集成电路可编程只读存储器电动程控只读存储器电可擦编程只读存储器时钟
文件页数/大小: 116 页 / 1017 K
品牌: STMICROELECTRONICS [ ST ]
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Electrical characteristics  
STM8S903K3 STM8S903F3  
(1)Data obtained with HSI clock configuration, after applying HW recommendations described  
in AN2860 (EMC guidelines for STM8S microcontrollers).  
10.3.11.3 Electromagnetic interference (EMI)  
Based on a simple application running on the product (toggling 2 LEDs through the I/O ports),  
the product is monitored in terms of emission. This emission test is in line with the norm SAE  
IEC 61967-2 which specifies the board and the loading of each pin.  
Table 51: EMI data  
Conditions  
(1)  
Max fHSE/fCPU  
Symbol Parameter  
Unit  
General  
Monitored  
16 MHz/ 16 MHz/  
conditions  
frequency band  
8 MHz  
16 MHz  
Peak level VDD = 5 V  
TA = 25 °C  
0.1 MHz to  
30 MHz  
5
5
LQFP32  
package  
30 MHz to  
130 MHz  
4
5
dBμV  
Conforming to  
SAE IEC  
61967-2  
SEMI  
130 MHz to  
1 GHz  
5
5
SAE EMI  
level  
2.5  
2.5  
SAE EMI level  
(1) Data based on characterisation results, not tested in production.  
10.3.11.4 Absolute maximum ratings (electrical sensitivity)  
Based on three different tests (ESD, DLU and LU) using specific measurement methods, the  
product is stressed to determine its performance in terms of electrical sensitivity. For more  
details, refer to the application note AN1181.  
10.3.11.5 Electrostatic discharge (ESD)  
Electrostatic discharges (a positive then a negative pulse separated by 1 second) are applied  
to the pins of each sample according to each pin combination. The sample size depends on  
the number of supply pins in the device (3 parts*(n+1) supply pin). One model can be simulated:  
90/116  
DocID15590 Rev 8  
 
 
 
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