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STM8S003F3P6C 参数 Datasheet PDF下载

STM8S003F3P6C图片预览
型号: STM8S003F3P6C
PDF下载: 下载PDF文件 查看货源
内容描述: [MICROCONTROLLER]
分类和应用: 时钟外围集成电路
文件页数/大小: 103 页 / 1343 K
品牌: STMICROELECTRONICS [ ST ]
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Electrical characteristics  
STM8S003F3 STM8S003K3  
Electromagnetic interference (EMI)  
Emission tests conform to the SAE IEC 61967-2 standard for test software, board layout  
and pin loading.  
Table 49. EMI data  
Conditions  
(1)  
Max fHSE/fCPU  
Symbol Parameter  
Unit  
Monitored  
frequency band  
General conditions  
16 MHz/ 16 MHz/  
8 MHz 16 MHz  
0.1 MHz to 30 MHz  
30 MHz to 130 MHz  
130 MHz to 1 GHz  
5
4
5
5
5
5
VDD = 5 V  
Peak level  
SEMI  
dBµV  
-
TA = 25 °C  
LQFP32 package  
conforming to SAE  
IEC 61967-2  
SAE EMI  
level  
-
2.5  
2.5  
1. Data based on characterization results, not tested in production.  
Absolute maximum ratings (electrical sensitivity)  
Based on two different tests (ESD and LU) using specific measurement methods, the  
product is stressed in order to determine its performance in terms of electrical sensitivity.  
For more details, refer to the application note AN1181.  
Electrostatic discharge (ESD)  
Electrostatic discharges (3 positive then 3 negative pulses separated by 1 second) are  
applied to the pins of each sample according to each pin combination. The sample size  
depends on the number of supply pins in the device (3 parts*(n+1) supply pin). This test  
conforms to the JESD22-A114A/A115A standard. For more details, refer to the application  
note AN1181.  
Table 50. ESD absolute maximum ratings  
Maximum  
Symbol  
Ratings  
Conditions  
Class  
Unit  
value(1)  
Electrostatic discharge voltage  
(Human body model)  
TA = 25°C, conforming to  
VESD(HBM)  
A
4000  
V
V
JESD22-A114  
Electrostatic discharge voltage  
(Charge device model)  
TA= 25°C, conforming to  
JESD22-C101  
VESD(CDM)  
IV  
1000  
1. Data based on characterization results, not tested in production.  
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