Electrical characteristics
Symbol
STM8S003F3 STM8S003K3
Table 17. Current characteristics
Ratings
Max.(1)
Unit
IVDD
IVSS
Total current into VDD power lines (source)(2)
Total current out of VSS ground lines (sink)(2)
Output current sunk by any I/O and control pin
Output current source by any I/Os and control pin
Injected current on NRST pin
100
80
20
IIO
-20
±4
(3)(4)
IINJ(PIN)
Injected current on OSCIN pin
±4
Injected current on any other pin(5)
±4
(3)
mA
ΣIINJ(PIN)
Total injected current (sum of all I/O and control pins)(5)
±20
1. Data based on characterization results, not tested in production.
2. All power (VDD, VDDIO, VDDA) and ground (VSS, VSSIO, VSSA) pins must always be connected to the
external supply.
3. IINJ(PIN) must never be exceeded. This is implicitly insured if VIN maximum is respected. If VIN maximum
cannot be respected, the injection current must be limited externally to the IINJ(PIN) value. A positive
injection is induced by VIN>VDD while a negative injection is induced by VIN<VSS. For true open-drain pads,
there is no positive injection current, and the corresponding VIN maximum must always be respected
4. Negative injection disturbs the analog performance of the device. See note in Section 9.3.10: 10-bit ADC
characteristics on page 82.
5. When several inputs are submitted to a current injection, the maximum ΣIINJ(PIN) is the absolute sum of the
positive and negative injected currents (instantaneous values). These results are based on characterization
with ΣIINJ(PIN) maximum current injection on four I/O port pins of the device.
Table 18. Thermal characteristics
Symbol
Ratings
Value
Unit
TSTG
TJ
Storage temperature range
-65 to 150
150
°C
Maximum junction temperature
48/103
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