Electrical characteristics
STM32F103xC, STM32F103xD, STM32F103xE
5.3.8
PLL characteristics
The parameters given in
are derived from tests performed under ambient
temperature and V
DD
supply voltage conditions summarized in
Table 28.
Symbol
PLL characteristics
Value
Parameter
Min
PLL input clock
(2)
1
40
16
Typ
8.0
Max
(1)
Unit
MHz
%
MHz
µs
ps
25
60
72
200
300
f
PLL_IN
f
PLL_OUT
t
LOCK
Jitter
PLL input clock duty cycle
PLL multiplier output clock
PLL lock time
Cycle-to-cycle jitter
1. Based on characterization, not tested in production.
2. Take care of using the appropriate multiplier factors so as to have PLL input clock values compatible with
the range defined by f
PLL_OUT
.
5.3.9
Memory characteristics
Flash memory
The characteristics are given at T
A
= –40 to 105 °C unless otherwise specified.
Table 29.
Symbol
t
prog
t
ERASE
t
ME
Flash memory characteristics
Parameter
Conditions
Min
40
20
20
Typ
52.5
Max
(1)
70
40
40
28
Unit
µs
ms
ms
mA
16-bit programming time T
A
�½–40
to +105 °C
Page (2 KB) erase time
Mass erase time
T
A
�½–40
to +105 °C
T
A
�½–40
to +105 °C
Read mode
f
HCLK
= 72 MHz with 2 wait
states, V
DD
= 3.3 V
I
DD
Supply current
Write mode
f
HCLK
= 72 MHz, V
DD
= 3.3 V
Erase mode
f
HCLK
= 72 MHz, V
DD
= 3.3 V
Power-down mode / Halt,
V
DD
= 3.0 to 3.6 V
7
5
50
2
3.6
mA
mA
µA
V
V
prog
Programming voltage
1. Guaranteed by design, not tested in production.
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