STM32F103xC, STM32F103xD, STM32F103xE
Electrical characteristics
Low-speed internal (LSI) RC oscillator
Table 26.
Symbol
f
LSI(2)
t
su(LSI)(3)
I
DD(LSI)(3)
Frequency
LSI oscillator startup time
LSI oscillator power consumption
0.65
LSI oscillator characteristics
(1)
Parameter
Min
30
Typ
40
Max
60
85
1.2
Unit
kHz
µs
µA
1. V
DD
= 3 V, T
A
= –40 to 105 °C unless otherwise specified.
2. Based on characterization, not tested in production.
3. Guaranteed by design, not tested in production.
Wakeup time from low-power mode
The wakeup times given in
is measured on a wakeup phase with a 8-MHz HSI RC
oscillator. The clock source used to wake up the device depends from the current operating
mode:
●
●
Stop or Standby mode: the clock source is the RC oscillator
Sleep mode: the clock source is the clock that was set before entering Sleep mode.
All timings are derived from tests performed under ambient temperature and V
DD
supply
voltage conditions summarized in
Table 27.
Symbol
t
WUSLEEP(1)
t
WUSTOP(1)
t
WUSTDBY(1)
Low-power mode wakeup timings
Parameter
Wakeup from Sleep mode
Wakeup from Stop mode (regulator in run mode)
Wakeup from Stop mode (regulator in low power mode)
Wakeup from Standby mode
Typ
1.8
3.6
µs
5.4
50
µs
Unit
µs
1. The wakeup times are measured from the wakeup event to the point in which the user application code
reads the first instruction.
Doc ID 14611 Rev 7
59/123
STMICROELECTRONICS [ STMICROELECTRONICS ]
