STM32F100x4, STM32F100x6, STM32F100x8, STM32F100xB
Electrical characteristics
5.3.9
Memory characteristics
Flash memory
The characteristics are given at T = –40 to 105 °C unless otherwise specified.
A
Table 27. Flash memory characteristics
Symbol
Parameter
Conditions
Min(1) Typ Max(1) Unit
tprog
tERASE
tME
16-bit programming time
Page (1 KB) erase time
Mass erase time
TA–40 to +105 °C
TA –40 to +105 °C
TA –40 to +105 °C
40
20
20
52.5
70
40
40
µs
ms
ms
Read mode
fHCLK = 24 MHz, VDD = 3.3 V
20
5
mA
mA
Write / Erase modes
fHCLK = 24 MHz, VDD = 3.3 V
IDD
Supply current
Power-down mode / Halt,
VDD = 3.0 to 3.6 V
50
µA
V
Vprog
Programming voltage
2
3.6
1. Guaranteed by design, not tested in production.
Table 28. Flash memory endurance and data retention
Value
Symbol
Parameter
Conditions
Unit
Min(1) Typ Max
TA = –40 to +85 °C (6 suffix versions)
TA = –40 to +105 °C (7 suffix versions)
1 kcycle(2) at TA = 85 °C
NEND
Endurance
kcycles
Years
10
30
10
20
tRET
Data retention 1 kcycle(2) at TA = 105 °C
10 kcycles(2) at TA = 55 °C
1. Based on characterization not tested in production.
2. Cycling performed over the whole temperature range.
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