STM32F100x4, STM32F100x6, STM32F100x8, STM32F100xB
Electrical characteristics
5.3.7
Internal clock source characteristics
The parameters given in Table 23 are derived from tests performed under the ambient
temperature and V supply voltage conditions summarized in Table 8.
DD
High-speed internal (HSI) RC oscillator
(1)(2)
Table 23. HSI oscillator characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
fHSI
Frequency
8
MHz
%
TA = –40 to 105 °C
TA = –10 to 85 °C
TA = 0 to 70 °C
TA = 25 °C
–2.7
–2
3
2.5
2.5
1
%
ACCHSI Accuracy of HSI oscillator
–2
%
–0.7
1
%
tsu(HSI) HSI oscillator startup time
2
µs
µA
IDD(HSI) HSI oscillator power consumption
1. Guaranteed by design, not tested in production.
80
100
2. VDD = 3.3 V, TA = –40 to 105 °C °C unless otherwise specified.
Low-speed internal (LSI) RC oscillator
(1)
Table 24. LSI oscillator characteristics
Symbol
Parameter
Min
Typ
Max
Unit
fLSI
Frequency
30
40
60
85
kHz
µs
(2)
tsu(LSI)
LSI oscillator startup time
(2)
IDD(LSI)
LSI oscillator power consumption
0.65
1.2
µA
1.
VDD = 3 V, TA = –40 to 105 °C °C unless otherwise specified.
2. Guaranteed by design, not tested in production.
Wakeup time from low-power mode
The wakeup times given in Table 25 are measured on a wakeup phase with an 8-MHz HSI
RC oscillator. The clock source used to wake up the device depends from the current
operating mode:
●
Stop or Standby mode: the clock source is the RC oscillator
●
Sleep mode: the clock source is the clock that was set before entering Sleep mode.
All timings are derived from tests performed under the ambient temperature and V supply
DD
voltage conditions summarized in Table 8.
Table 25. Low-power mode wakeup timings
Symbol
Parameter
Wakeup from Sleep mode
Typ
Unit
(1)
1.8
µs
tWUSLEEP
Doc ID 16455 Rev 2
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