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STM32F302RC 参数 Datasheet PDF下载

STM32F302RC图片预览
型号: STM32F302RC
PDF下载: 下载PDF文件 查看货源
内容描述: ARM的Cortex- M4F 32B MCUFPU ,高达256 KB的SRAM Flash48KB [ARM Cortex-M4F 32b MCUFPU, up to 256KB Flash48KB SRAM]
分类和应用: 静态存储器
文件页数/大小: 133 页 / 2061 K
品牌: STMICROELECTRONICS [ ST ]
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STM32F302xx/STM32F303xx  
Static latch-up  
Electrical characteristics  
Two complementary static tests are required on six parts to assess the latch-up  
performance:  
A supply overvoltage is applied to each power supply pin  
A current injection is applied to each input, output and configurable I/O pin  
These tests are compliant with EIA/JESD 78A IC latch-up standard.  
Table 50. Electrical sensitivities  
Symbol  
Parameter  
Conditions  
Class  
LU  
Static latch-up class  
TA = +105 °C conforming to JESD78A  
II level A  
6.3.13  
I/O current injection characteristics  
As a general rule, current injection to the I/O pins, due to external voltage below V or  
SS  
above V (for standard, 3 V-capable I/O pins) should be avoided during normal product  
DD  
operation. However, in order to give an indication of the robustness of the microcontroller in  
cases when abnormal injection accidentally happens, susceptibility tests are performed on a  
sample basis during device characterization.  
Functional susceptibility to I/O current injection  
While a simple application is executed on the device, the device is stressed by injecting  
current into the I/O pins programmed in floating input mode. While current is injected into the  
I/O pin, one at a time, the device is checked for functional failures.  
The failure is indicated by an out of range parameter: ADC error above a certain limit (higher  
than 5 LSB TUE), out of conventional limits of induced leakage current on adjacent pins (out  
of –5 µA/+0 µA range), or other functional failure (for example reset occurrence or oscillator  
frequency deviation).  
The test results are given in Table 51  
Doc ID 023353 Rev 5  
85/133  
 
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