Electrical characteristics
STM32F302xx/STM32F303xx
6.3.10
Memory characteristics
Flash memory
The characteristics are given at T = –40 to 105 °C unless otherwise specified.
A
Table 45. Flash memory characteristics
Symbol
Parameter
Conditions
Min
Typ
Max(1) Unit
tprog
16-bit programming time TA = –40 to +105 °C
40
20
20
-
53.5
60
40
40
10
12
µs
ms
ms
mA
mA
tERASE Page (2 KB) erase time TA = –40 to +105 °C
-
-
-
-
tME
Mass erase time
TA = –40 to +105 °C
Write mode
IDD
Supply current
Erase mode
-
1. Guaranteed by design, not tested in production.
Table 46. Flash memory endurance and data retention
Value
Min(1)
Symbol
Parameter
Conditions
Unit
TA = –40 to +85 °C (6 suffix versions)
TA = –40 to +105 °C (7 suffix versions)
NEND
Endurance
10
kcycles
1 kcycle(2) at TA = 85 °C
1 kcycle(2) at TA = 105 °C
10 kcycles(2) at TA = 55 °C
30
10
20
tRET
Data retention
Years
1. Data based on characterization results, not tested in production.
2. Cycling performed over the whole temperature range.
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