Electrical characteristics
STM32F302xx/STM32F303xx
6.3.8
Internal clock source characteristics
The parameters given in Table 42 are derived from tests performed under ambient
temperature and supply voltage conditions summarized in Table 22.
High-speed internal (HSI) RC oscillator
(1)
Table 42. HSI oscillator characteristics
Symbol
Parameter
Frequency
HSI user trimming step
Conditions
Min
Typ
Max
Unit
fHSI
-
-
8
-
-
-
-
-
-
-
MHz
%
TRIM
1(2)
55(2)
4.6(3)
2.9(3)
-
DuCy(HSI) Duty cycle
45(2)
–3.8(3)
–2.9(3)
-
%
TA = –40 to 105 °C
TA = –10 to 85 °C
TA = 0 to 70 °C
TA = 25 °C
%
Accuracy of the HSI
oscillator (factory
calibrated)
%
ACCHSI
%
–1
1
%
HSI oscillator startup
time
tsu(HSI)
1(2)
-
2(2)
µs
HSI oscillator power
consumption
IDD(HSI)
-
80
100(3)
µA
1. VDDA = 3.3 V, TA = –40 to 105 °C unless otherwise specified.
2. Guaranteed by design, not tested in production.
3. Data based on characterization results, not tested in production.
Figure 18. HSI oscillator accuracy characterization results
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1. The above curves are based on characterisation results, not tested in production
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