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ST10F276S-4T3 参数 Datasheet PDF下载

ST10F276S-4T3图片预览
型号: ST10F276S-4T3
PDF下载: 下载PDF文件 查看货源
内容描述: 16位MCU与MAC单元832 KB的闪存和68 KB的RAM [16-bit MCU with MAC unit 832 Kbyte Flash memory and 68 Kbyte RAM]
分类和应用: 闪存
文件页数/大小: 235 页 / 2491 K
品牌: STMICROELECTRONICS [ ST ]
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ST10F276E  
Internal Flash memory  
Erase suspend, program and resume  
A Sector Erase operation can be suspended in order to program (Word or Double Word)  
another sector.  
Example: Sector Erase of sector B3F1 of Bank 3 in XFLASH Module.  
FCR0H|= 0x0800;/*Set SER in FCR0H*/  
FCR1H|= 0x0002;/*Set B3F1*/  
FCR0H|= 0x8000;/*Operation start*/  
Example: Sector Erase Suspend.  
FCR0H|= 0x4000;/*Set SUSP in FCR0H*/  
do  
/*Loop to wait for LOCK=0 and WMS=0*/  
{tmp1 = FCR0L;  
tmp2 = FCR0H;  
} while ((tmp1 && 0x0010) || (tmp2 && 0x8000));  
Example: Word Program of data 0x5555AAAA at address 0x0C5554 in XFLASH module.  
FCR0H&= 0xBFFF;/*Rst SUSP in FCR0H*/  
FCR0H|= 0x2000;/*Set WPG in FCR0H*/  
FARL = 0x5554; /*Load Add in FARL*/  
FARH = 0x000C; /*Load Add in FARH*/  
FDR0L = 0xAAAA; /*Load Data in FDR0L*/  
FDR0H = 0x5555; /*Load Data in FDR0H*/  
FCR0H|= 0x8000; /*Operation start*/  
Once the Program operation is finished, the Erase operation can be resumed in the  
following way:  
FCR0H|= 0x0800;/*Set SER in FCR0H*/  
FCR0H|= 0x8000;/*Operation resume*/  
Notice that during the Program Operation in Erase suspend, bits SER and SUSP are low. A  
Word or Double Word Program during Erase Suspend cannot be suspended.  
To summarize:  
A Sector Erase can be suspended by setting SUSP bit  
To perform a Word Program operation during Erase Suspend, firstly bits SUSP and  
SER must be reset, then bit WPG and WMS can be set  
To resume the Sector Erase operation bit SER must be set again  
In any case it is forbidden to start any write operation with SUSP bit already set  
Set protection  
Example 1: Enable Write Protection of sectors B0F3-0 of Bank 0 in IFLASH module.  
FCR0H|= 0x0100;/*Set SPR in FCR0H*/  
FARL = 0xDFB4;/*Load Add of register FNVWPIRL in FARL*/  
FARH = 0x000E;/*Load Add of register FNVWPIRL in FARH*/  
FDR0L = 0xFFF0;/*Load Data in FDR0L*/  
FDR0H = 0xFFFF;/*Load Data in FDR0H*/  
FCR0H|= 0x8000;/*Operation start*/  
Notice that bit SMOD of FCR0H must not be set, since Write Protection bits of IFLASH  
Module are stored in Test-Flash (XFLASH Module).  
Doc ID 12303 Rev 3  
43/235  
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