SG2525A-SG3525A
ELECTRICAL CHARACTERISTICS
(V# i = 20 V, andover operating temperature, unlessotherwise specified)
SG2525A
SG3525A
Unit
Symbol
Parameter
Test Conditions
Min. Typ. Max. Min. Typ. Max.
REFERENCE SECTION
VREF
Output Voltage
Line Regulation
Load Regulation
T = 25 C
5.05
5.1
10
20
20
5.15
20
5
5.1
10
20
20
5.2
20
50
50
V
°
j
V
∆
Vi = 8 to 35 V
mV
mV
mV
REF
∆VREF
IL = 0 to 20 mA
50
V
/ T* Temp. Stability
Over Operating Range
50
∆
∆
REF
*
Total Output Variation
Line, Load and
Temperature
5
5.2
4.95
5.25
V
Short Circuit Current
Output Noise Voltage
VREF = 0 Tj = 25 °C
80
40
100
200
80
40
100
200
mA
*
10 Hz
f
10 kHz,
Vrms
µ
≤ ≤
Tj = 25 °C
∆VREF
*
Long Term Stability
Tj = 125 °C, 1000 hrs
20
50
20
50
mV
OSCILLATOR SECTION * *
*, •
*,
Initial Accuracy
Tj = 25 °C
± 2
± 6
± 2
± 6
%
%
Voltage Stability
Temperature Stability
Minimum Frequency
Maximum Frequency
Current Mirror
Vi = 8 to 35 V
0.3
1
1
2
±
•
±
±
±
∆f/∆T*
fMIN
Over Operating Range
RT = 200 KΩ CT = 0.1 µF
± 3
± 6
± 3
± 6
%
120
120
Hz
fMAX
R = 2 K CT = 470 pF
400
1.7
3
400
1.7
3
KHz
mA
V
Ω
T
IRT = 2 mA
2
3.5
0.5
2
2.2
2
3.5
0.5
2
2.2
*, •
Clock Amplitude
Clock Width
*,
T = 25 C
0.3
1.2
1
0.3
1.2
1
s
µ
•
°
j
Sync Threshold
Sync Input Current
2.8
2.5
2.8
2.5
V
Sync Voltage = 3.5 V
1
1
mA
ERROR AMPLIFIER SECTION (VCM = 5.1 V)
VOS
Ib
Input Offset Voltage
Input Bias Current
Input Offset Current
DC Open Loop Gain
0.5
1
5
10
1
2
1
10
10
1
mV
A
µ
Ios
µA
dB
RL ≥ 10 MΩ
60
1
75
2
60
1
75
2
*
Gain Bandwidth
Product
Gv = 0 dB
T = 25 C
MHz
°
j
*, ❚
DC Transconduct.
30 KΩ ≤ RL ≤ 1 MΩ
Tj = 25 °C
1.1
1.5
1.1
1.5
ms
Output Low Level
Output High Level
Comm. Mode Reject.
0.2
5.6
75
0.5
0.2
5.6
75
0.5
V
V
3.8
60
50
3.8
60
50
CMR
PSR
VCM = 1.5 to 5.2 V
Vi = 8 to 35 V
dB
dB
Supply Voltage
Rejection
60
60
3/12
STMICROELECTRONICS [ ST ]
