M29W320ET, M29W320EB
Table 5. Commands, 8-bit mode, BYTE = VIL
Bus Write Operations
3rd 4th
Add Data Add Data Add Data Add Data Add Data Add Data
Command
1st
2nd
5th
6th
1
3
X
F0
Read/Reset
AAA
AA
555
555
555
55
55
55
X
F0
90
A0
(BA)
AAA
Auto Select
3
AAA
AA
Program
4
5
3
2
2
6
AAA
AAA
AAA
X
AA
55
AAA
PA1
AAA
PA
PD
Quadruple Byte Program
Unlock Bypass
PA0 PD0
PD1 PA2 PD2 PA3 PD3
20
AA
A0
90
555
PA
55
PD
00
55
55
Unlock Bypass Program
Unlock Bypass Reset
Chip Erase
X
X
AAA
AA
AA
B0
30
555
555
AAA
AAA
80
80
AAA
AAA
AA
AA
555
555
55
55
AAA
BA
10
30
Block Erase
6+ AAA
Erase Suspend
1
1
1
3
4
BA
BA
Erase Resume
Read CFI Query
Enter Extended Block
Exit Extended Block
AA
98
AAA
AAA
AA
AA
555
555
55
55
AAA
AAA
88
90
X
00
Note: X Don’t Care, PA Program Address, PD Program Data, BA Any address in the Block. All values in the table are in hexadecimal.
The Command Interface only uses A–1, A0-A10 and DQ0-DQ7 to verify the commands; A11-A20, DQ8-DQ14 and DQ15 are Don’t
Care. DQ15A–1 is A–1 when BYTE is V or DQ15 when BYTE is V
.
IH
IL
Table 6. Program, Erase Times and Program, Erase Endurance Cycles
(1, 2)
(2)
Parameter
Min
Unit
s
Typ
40
Max
(3)
Chip Erase
200
(3)
Block Erase (64 KBytes)
0.8
s
6
(4)
Erase Suspend Latency Time
Program (Byte or Word)
µs
µs
µs
s
50
(4)
(3)
(3)
(3)
(3)
10
10
40
20
10
200
200
200
100
100
Double Word Program (Byte or Word)
Chip Program (Byte by Byte)
Chip Program (Word by Word)
s
Chip Program (Quadruple Byte or Double Word)
Program/Erase Cycles (per Block)
Data Retention
s
100,000
20
cycles
years
Note: 1. Typical values measured at room temperature and nominal voltages.
2. Sampled, but not 100% tested.
3. Maximum value measured at worst case conditions for both temperature and V after 100,00 program/erase cycles.
CC
4. Maximum value measured at worst case conditions for both temperature and V
.
CC
18/46
STMICROELECTRONICS [ ST ]
