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M29W320EB70N6E 参数 Datasheet PDF下载

M29W320EB70N6E图片预览
型号: M29W320EB70N6E
PDF下载: 下载PDF文件 查看货源
内容描述: 32兆位(4MB X8或X16的2Mb ,引导块) 3V供应闪存 [32 Mbit (4Mb x8 or 2Mb x16, Boot Block) 3V Supply Flash Memory]
分类和应用: 闪存存储内存集成电路光电二极管
文件页数/大小: 46 页 / 887 K
品牌: STMICROELECTRONICS [ ST ]
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M29W320ET, M29W320EB  
Fast Program Commands  
The third bus cycle latches the Address and  
the Data of the second word to be written and  
starts the Program/Erase Controller.  
There are two Fast Program commands available  
to improve the programming throughput, by writing  
several adjacent words or bytes in parallel. The  
Quadruple Byte Program command is available for  
x8 operations, while the Double Word Program  
command is available for x16 operations.  
Fast Program commands should not be attempted  
when VPP/WP is not at VPP. Care must be taken  
because applying a 12V VPP voltage to the VPP/  
WP pin will temporarily unprotect any protected  
block.  
Unlock Bypass Command  
The Unlock Bypass command is used in conjunc-  
tion with the Unlock Bypass Program command to  
program the memory faster than with the standard  
program commands. When the cycle time to the  
device is long, considerable time saving can be  
made by using these commands. Three Bus Write  
operations are required to issue the Unlock By-  
pass command.  
After programming has started, Bus Read opera-  
tions output the Status Register content.  
Once the Unlock Bypass command has been is-  
sued the memory enters Unlock Bypass mode.  
The Unlock Bypass Program command can then  
be issued to program addresses or the Unlock By-  
pass Reset command can be issued to return to  
Read mode. In Unlock Bypass mode the memory  
can be read as if in Read mode.  
When VPP is applied to the VPP/Write Protect pin  
the memory automatically enters the Unlock By-  
pass mode and the Unlock Bypass Program com-  
mand can be issued immediately. Care must be  
taken because applying a 12V VPP voltage to the  
VPP/WP pin will temporarily unprotect any protect-  
ed block.  
After the program operation has completed the  
memory will return to the Read mode, unless an  
error has occurred. When an error occurs Bus  
Read operations will continue to output the Status  
Register. A Read/Reset command must be issued  
to reset the error condition and return to Read  
mode.  
Note that the Fast Program commands cannot  
change a bit set at ’0’ back to ’1’. One of the Erase  
Commands must be used to set all the bits in a  
block or in the whole memory from ’0’ to ’1’.  
Typical Program times are given in Table  
6., Program, Erase Times and Program, Erase  
Endurance Cycles  
Quadruple Byte Program Command. The Qua-  
druple Byte Program command is used to write a  
page of four adjacent Bytes in parallel. The four  
bytes must differ only for addresses A0, DQ15A-1.  
Five bus write cycles are necessary to issue the  
Quadruple Byte Program command.  
Unlock Bypass Program Command  
The Unlock Bypass Program command can be  
used to program one address in the memory array  
at a time. The command requires two Bus Write  
operations, the final write operation latches the ad-  
dress and data, and starts the Program/Erase  
Controller.  
The Program operation using the Unlock Bypass  
Program command behaves identically to the Pro-  
gram operation using the Program command. The  
operation cannot be aborted, a Bus Read opera-  
tion outputs the Status Register. See the Program  
command for details on the behavior.  
The first bus cycle sets up the Quadruple Byte  
Program Command.  
The second bus cycle latches the Address and  
the Data of the first byte to be written.  
The third bus cycle latches the Address and  
the Data of the second byte to be written.  
The fourth bus cycle latches the Address and  
the Data of the third byte to be written.  
Unlock Bypass Reset Command  
The Unlock Bypass Reset command can be used  
to return to Read/Reset mode from Unlock Bypass  
Mode. Two Bus Write operations are required to  
issue the Unlock Bypass Reset command. Read/  
Reset command does not exit from Unlock Bypass  
Mode.  
The fifth bus cycle latches the Address and the  
Data of the fourth byte to be written and starts  
the Program/Erase Controller.  
Double Word Program Command. The Double  
Word Program command is used to write a page  
of two adjacent words in parallel. The two words  
must differ only for the address A0.  
Three bus write cycles are necessary to issue the  
Double Word Program command.  
Chip Erase Command  
The Chip Erase command can be used to erase  
the entire chip. Six Bus Write operations are re-  
quired to issue the Chip Erase Command and start  
the Program/Erase Controller.  
If any blocks are protected then these are ignored  
and all the other blocks are erased. If all of the  
blocks are protected the Chip Erase operation ap-  
pears to start but will terminate within about 100µs,  
The first bus cycle sets up the Double Word  
Program Command.  
The second bus cycle latches the Address and  
the Data of the first word to be written.  
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