BTA/BTB24, BTA25, BTA26 and T25 Series
Fig. 6:
Non-repetitive surge peak on-state
current for a sinusoidal pulse with width
tp < 10ms, and corresponding value of I t.
ITSM (A), I t (A s)
3000
Tj initial=25°C
dI/dt limitation:
50A/µs
Fig. 7:
Relative variation of gate trigger current,
holding current and latching current versus
junction temperature (typical values).
IGT,IH,IL[Tj] / IGT,IH,IL [Tj=25°C]
2.5
2.0
1000
ITSM
IGT
1.5
It
IH & IL
1.0
0.5
tp (ms)
100
0.01
0.10
1.00
10.00
Tj(°C)
0.0
-40
-20
0
20
40
60
80
100
120
140
Fig. 8:
Relative variation of critical rate of
decrease of main current versus (dV/dt)c (typical
values).
(dI/dt)c [(dV/dt)c] / Specified (dI/dt)c
2.4
2.2
2.0
1.8
1.6
BW/CW/T2535
1.4
B
1.2
1.0
0.8
0.6
(dV/dt)c (V/µs)
0.4
0.1
1.0
10.0
Fig. 9:
Relative variation of critical rate of
decrease of main current versus junction
temperature.
(dI/dt)c [Tj] / (dI/dt)c [Tj specified]
6
5
4
3
2
1
Tj (°C)
0
25
50
75
100
125
100.0
0
Fig. 10:
D PAK Thermal resistance junction to
ambient versus copper surface under tab (printed
circuit board FR4, copper thickness: 35
µm).
Rth(j-a) (°C/W)
80
70
60
50
40
30
20
10
0
0
4
8
12
16
S(cm )
20
24
28
32
36
40
D PAK
6/9
STMICROELECTRONICS [ STMICROELECTRONICS ]
