BTA/BTB24, BTA25, BTA26 and T25 Series
Fig. 1:
Maximum power dissipation versus RMS
on-state current (full cycle).
P (W)
30
25
20
15
10
5
0
0
5
IT(RMS) (A)
10
15
20
25
Fig. 2-1:
RMS on-state current versus case
temperature (full cycle).
IT(RMS) (A)
30
BTB/T25
25
BTA24
20
15
10
5
Tc(°C)
0
0
25
50
75
100
125
BTA25/26
Fig. 2-2:
D PAK RMS on-state current versus
ambient temperature (printed circuit board FR4,
copper thickness: 35
µm),
full cycle.
IT(RMS) (A)
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
0
25
Tamb(°C)
50
75
100
125
D
2
PAK
(S=1cm
2
)
Fig. 3:
Relative variation of thermal impedance
versus pulse duration.
1E+0
K=[Zth/Rth]
Zth(j-c)
1E-1
Zth(j-a)
BTA/BTB24/T25
1E-2
Zth(j-a)
BTA26
tp (s)
1E-3
1E-3
1E-2
1E-1
1E+0
1E+1
1E+2 5E+2
Fig. 4:
values).
ITM (A)
300
100
On-state characteristics (maximum
Fig. 5:
Surge peak on-state current versus
number of cycles.
ITSM (A)
300
250
t=20ms
Tj max
200
150
Non repetitive
Tj initial=25°C
One cycle
10
Tj=25°C
100
Repetitive
Tc=75°C
VTM (V)
1
0.5
1.0
1.5
2.0
2.5
3.0
3.5
Tj max.
Vto = 0.85 V
Rd = 16 mΩ
50
Number of cycles
4.0
4.5
0
1
10
100
1000
5/9
STMICROELECTRONICS [ STMICROELECTRONICS ]
