BTA/BTB24, BTA25, BTA26 and T25 Series
ELECTRICAL CHARACTERISTICS
(Tj = 25°C, unless otherwise specified)
s
SNUBBERLESS™ (3 Quadrants) T25-G, BTA/BTB24...W, BTA25...W, BTA26...W
Symbol
Test Conditions
Quadrant
T25
T2535
I
GT
(1)
V
GT
V
GD
I
H
(2)
I
L
dV/dt (2)
V
D
= 12 V
V
D
= V
DRM
I
T
= 500 mA
I
G
= 1.2 I
GT
V
D
= 67 % V
DRM
gate open Tj = 125°C
Tj = 125°C
I - III
II
MIN.
MIN.
(dI/dt)c (2) Without snubber
R
L
= 33
Ω
R
L
= 3.3 kΩ
Tj = 125°C
I - II - III
I - II - III
I - II - III
MAX.
MAX.
MIN.
MAX.
MAX.
50
70
80
500
13
35
BTA/BTB
CW
35
1.3
0.2
50
70
80
500
13
75
80
100
1000
22
V/µs
A/ms
BW
50
mA
V
V
mA
mA
Unit
s
STANDARD (4 Quadrants): BTA25...B, BTA26...B
Symbol
I
GT
(1)
V
D
= 12 V
V
GT
V
GD
I
H
(2)
I
L
dV/dt (2)
V
D
= V
DRM
I
T
= 500 mA
I
G
= 1.2 I
GT
V
D
= 67 % V
DRM
gate open Tj = 125°C
Tj = 125°C
I - III - IV
II
MIN.
MIN.
R
L
= 3.3 kΩ
Tj = 125°C
Test Condit ions
R
L
= 33
Ω
Quadrant
I - II - III
IV
ALL
ALL
MAX.
MAX.
MIN.
MAX.
MAX.
Value
50
100
1.3
0.2
80
70
160
500
10
V/µs
V/µs
Unit
mA
V
V
mA
mA
(dV/dt)c (2) (dI/dt)c = 13.3 A/ms
STATIC CHARACTERISTICS
Symbol
V
TM
(2)
V
to
(2)
R
d
(2)
I
DRM
I
RRM
Note 1:
minimum IGT is guaranted at 5% of IGT max.
Note 2:
for both polarities of A2 referenced to A1
Test Conditions
I
TM
= 35 A
tp = 380
µs
Tj = 25°C
Tj = 125°C
Tj = 125°C
Tj = 25°C
Tj = 125°C
MAX.
MAX.
MAX.
MAX.
Value
1.55
0.85
16
5
3
Unit
V
V
mΩ
µA
mA
Threshold voltage
Dynamic resistance
V
DRM
= V
RRM
2/9
STMICROELECTRONICS [ STMICROELECTRONICS ]
