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13NM60N 参数 Datasheet PDF下载

13NM60N图片预览
型号: 13NM60N
PDF下载: 下载PDF文件 查看货源
内容描述: N沟道600 V , 0.320 Ω , 10 A PowerFLAT ? ( 8×8 ) HV的MDmesh ?二功率MOSFET [N-channel 600 V, 0.320 Ω, 10 A PowerFLAT? (8x8) HV MDmesh? II Power MOSFET]
分类和应用:
文件页数/大小: 14 页 / 831 K
品牌: STMICROELECTRONICS [ STMICROELECTRONICS ]
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STL13NM60N
Electrical characteristics
Table 7.
Symbol
I
SD
I
SDM
(1)
Source drain diode
Parameter
Source-drain current
Source-drain current (pulsed)
Forward on voltage
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Reverse recovery time
Reverse recovery charge
Reverse recovery current
I
SD
= 10 A, V
GS
= 0
I
SD
= 10 A, di/dt = 100 A/µs
V
DD
= 100 V (see
I
SD
= 10 A, di/dt = 100 A/µs
V
DD
= 100 V, T
j
= 150 °C
(see
Test conditions
Min.
-
-
-
340
2
18
290
190
17
Typ.
Max. Unit
10
40
1.6
A
A
V
ns
µC
A
ns
µC
A
V
SD (2)
t
rr
Q
rr
I
RRM
t
rr
Q
rr
I
RRM
-
1. Pulse width limited by safe operating area.
2. Pulsed: pulse duration = 300 µs, duty cycle 1.5%
Doc ID 018870 Rev 1
5/14