STL13NM60N
N-channel 600 V, 0.320
Ω,
10 A PowerFLAT™ (8x8) HV
MDmesh™ II Power MOSFET
Features
Order code
STL13NM60N
V
DSS
@
T
Jmax
650 V
R
DS(on)
max
< 0.385
Ω
I
D
10 A
(1)
1. The value is rated according to R
thj-case
■
■
■
100% avalanche tested
Low input capacitance and gate charge
Low gate input resistance
Application
Switching applications
Description
This device is a N-channel Power MOSFETs
made using the second generation of MDmesh™
technology. This revolutionary transistor
associates a new vertical structure to the
company’s strip layout to yield one of the world’s
lowest on-resistance and gate charge. It is
therefore suitable for the most demanding high
efficiency converters.
Figure 1.
Internal schematic diagram
Table 1.
Device summary
Marking
13NM60N
Package
PowerFLAT™ (8x8) HV
Packaging
Tape and reel
Order code
STL13NM60N
May 2011
Doc ID 018870 Rev 1
1/14
14
STMICROELECTRONICS [ STMICROELECTRONICS ]
