Electrical characteristics
STL13NM60N
2
Electrical characteristics
(T
C
= 25 °C unless otherwise specified)
Table 4.
Symbol
V
(BR)DSS
I
DSS
I
GSS
V
GS(th)
R
DS(on)
On /off states
Parameter
Drain-source
breakdown voltage
Test conditions
I
D
= 1 mA, V
GS
= 0
Min.
600
1
100
100
2
3
0.320
4
0.385
Typ.
Max.
Unit
V
µA
µA
nA
V
Ω
V
DS
= Max rating
Zero gate voltage
drain current (V
GS
= 0) V
DS
= Max rating, T
C
=125 °C
Gate-body leakage
current (V
DS
= 0)
V
GS
= ± 25 V
Gate threshold voltage V
DS
= V
GS
, I
D
= 250 µA
Static drain-source on
resistance
V
GS
= 10 V, I
D
= 5 A
Table 5.
Symbol
C
iss
C
oss
C
rss
C
oss eq.(1)
R
G
Q
g
Q
gs
Q
gd
Dynamic
Parameter
Input capacitance
Output capacitance
Reverse transfer
capacitance
Output equivalent
capacitance
Intrinsic gate
resistance
Total gate charge
Gate-source charge
Gate-drain charge
Test conditions
Min.
Typ.
790
60
3.6
135
4.7
30
4
15
Max.
Unit
pF
pF
pF
pF
Ω
nC
nC
nC
V
DS
= 50 V, f = 1 MHz,
V
GS
= 0
-
-
V
DS
= 0 to 480 V, V
GS
= 0
f = 1 MHz open drain
V
DD
= 480 V, I
D
= 10 A,
V
GS
= 10 V
(see
-
-
-
-
-
-
1. C
oss eq.
is defined as a constant equivalent capacitance giving the same charging time as C
oss
when V
DS
increases from 0 to 80% V
DS
.
Table 6.
Symbol
t
d(on)
t
r
t
d(off)
t
f
Switching times
Parameter
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Test conditions
V
DD
= 300 V, I
D
= 10 A,
R
G
= 4.7
Ω,
V
GS
= 10 V
(see
Min.
Typ.
13
25
85
50
Max
Unit
ns
ns
ns
ns
-
-
4/14
Doc ID 018870 Rev 1
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