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SST39VF016-70-4I-B3K 参数 Datasheet PDF下载

SST39VF016-70-4I-B3K图片预览
型号: SST39VF016-70-4I-B3K
PDF下载: 下载PDF文件 查看货源
内容描述: 8兆位/ 16兆位( X8 )多用途闪存 [8 Mbit / 16 Mbit (x8) Multi-Purpose Flash]
分类和应用: 闪存内存集成电路
文件页数/大小: 26 页 / 310 K
品牌: SST [ SILICON STORAGE TECHNOLOGY, INC ]
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8 Mbit / 16 Mbit Multi-Purpose Flash  
SST39LF080 / SST39LF016 / SST39VF080 / SST39VF016  
Data Sheet  
TABLE 9: DC OPERATING CHARACTERISTICS  
VDD = 3.0-3.6V FOR SST39LF080/016 AND 2.7-3.6V FOR SST39VF080/016  
Limits  
Symbol Parameter  
Min  
Max Units Test Conditions  
Address input=VIL/VIH, at f=1/TRC Min  
IDD  
Power Supply Current  
VDD=VDD Max  
Read  
15  
20  
20  
20  
mA  
mA  
µA  
CE#=OE#=VIL, WE#=VIH, all I/Os open  
CE#=WE#=VIL, OE#=VIH  
CE#=VIHC, VDD=VDD Max  
Program and Erase  
Standby VDD Current  
Auto Low Power  
ISB  
IALP  
µA  
CE#=VILC, VDD=VDD Max  
All inputs=VIHC or VILC WE#=VIHC  
ILI  
Input Leakage Current  
Output Leakage Current  
Input Low Voltage  
1
µA  
µA  
V
VIN=GND to VDD, VDD=VDD Max  
VOUT=GND to VDD, VDD=VDD Max  
VDD=VDD Min  
ILO  
10  
0.8  
0.3  
VIL  
VILC  
VIH  
VIHC  
VOL  
VOH  
Input Low Voltage (CMOS)  
Input High Voltage  
V
VDD=VDD Max  
0.7VDD  
V
VDD=VDD Max  
Input High Voltage (CMOS)  
Output Low Voltage  
VDD-0.3  
V
VDD=VDD Max  
0.2  
V
IOL=100 µA, VDD=VDD Min  
IOH=-100 µA, VDD=VDD Min  
Output High Voltage  
VDD-0.2  
V
T9.2 396  
TABLE 10: RECOMMENDED SYSTEM POWER-UP TIMINGS  
Symbol  
Parameter  
Minimum  
100  
Units  
1
TPU-READ  
Power-up to Read Operation  
Power-up to Program/Erase Operation  
µs  
µs  
1
TPU-WRITE  
100  
T10.1 396  
1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter.  
TABLE 11: CAPACITANCE (Ta = 25°C, f=1 Mhz, other pins open)  
Parameter  
Description  
Test Condition  
VI/O = 0V  
Maximum  
1
CI/O  
I/O Pin Capacitance  
Input Capacitance  
12 pF  
6 pF  
1
CIN  
VIN = 0V  
T11.0 396  
1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter.  
TABLE 12: RELIABILITY CHARACTERISTICS  
Symbol  
Parameter  
Endurance  
Data Retention  
Latch Up  
Minimum Specification  
Units  
Test Method  
1
NEND  
10,000  
100  
Cycles JEDEC Standard A117  
1
TDR  
Years  
mA  
JEDEC Standard A103  
JEDEC Standard 78  
1
ILTH  
100 + IDD  
T12.1 396  
1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter.  
©2001 Silicon Storage Technology, Inc.  
S71146-03-000 6/01 396  
11  
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