2 Mbit / 4 Mbit / 8 Mbit Multi-Purpose Flash
SST39LF200A / SST39LF400A / SST39LF800A
SST39VF200A / SST39VF400A / SST39VF800A
Data Sheet
AC CHARACTERISTICS
TABLE 14: Read Cycle Timing Parameters VDD = 3.0-3.6V
SST39LF200A-45
SST39LF200A/400A/800A-55
Symbol Parameter
Min
Max
Min
Max
Units
ns
TRC
TCE
TAA
Read Cycle Time
45
55
Chip Enable Access Time
Address Access Time
45
45
30
55
55
30
ns
ns
TOE
TCLZ
TOLZ
Output Enable Access Time
CE# Low to Active Output
OE# Low to Active Output
CE# High to High-Z Output
OE# High to High-Z Output
Output Hold from Address Change
ns
1
1
0
0
0
0
ns
ns
1
TCHZ
15
15
15
15
ns
1
TOHZ
ns
1
TOH
0
0
ns
T14.7 1117
1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter.
TABLE 15: Read Cycle Timing Parameters VDD = 2.7-3.6V
SST39VF200A/400A/800A-70
Symbol Parameter
Min
Max
Units
ns
TRC
TCE
TAA
Read Cycle Time
70
Chip Enable Access Time
Address Access Time
70
70
35
ns
ns
TOE
TCLZ
TOLZ
Output Enable Access Time
CE# Low to Active Output
OE# Low to Active Output
CE# High to High-Z Output
OE# High to High-Z Output
Output Hold from Address Change
ns
1
1
0
0
ns
ns
1
TCHZ
TOHZ
20
20
ns
1
ns
1
TOH
0
ns
T15.7 1117
1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter.
©2007 Silicon Storage Technology, Inc.
S71117-09-000
2/07
13
SST [ SILICON STORAGE TECHNOLOGY, INC ]
