2 Mbit / 4 Mbit / 8 Mbit Multi-Purpose Flash
SST39LF200A / SST39LF400A / SST39LF800A
SST39VF200A / SST39VF400A / SST39VF800A
Data Sheet
TABLE 10: DC Operating Characteristics
VDD = 3.0-3.6V for SST39LF200A/400A/800A and 2.7-3.6V for SST39VF200A/400A/800A1
Limits
Symbol Parameter
Min
Max
Units
Test Conditions
IDD
Power Supply Current
Address input=VILT/VIHT, at f=1/TRC Min,
VDD=VDD Max
Read2
30
30
20
1
mA
mA
µA
µA
µA
CE#=VIL, OE#=WE#=VIH, all I/Os open
CE#=WE#=VIL, OE#=VIH
CE#=VIHC, VDD=VDD Max
VIN=GND to VDD, VDD=VDD Max
VOUT=GND to VDD, VDD=VDD Max
VDD=VDD Min
Program and Erase
Standby VDD Current
Input Leakage Current
Output Leakage Current
Input Low Voltage
ISB
ILI
ILO
10
0.8
VIL
VIH
VIHC
VOL
VOH
Input High Voltage
Input High Voltage (CMOS)
Output Low Voltage
Output High Voltage
0.7VDD
V
V
V
V
VDD=VDD Max
VDD-0.3
VDD=VDD Max
0.2
IOL=100 µA, VDD=VDD Min
VDD-0.2
IOH=-100 µA, VDD=VDD Min
T10.7 1117
1. Typical conditions for the Active Current shown on the front data sheet page are average values at 25°C
(room temperature), and VDD = 3V for VF devices. Not 100% tested.
2. Values are for 70 ns conditions. See the Multi-Purpose Flash Power Rating application note for further information.
TABLE 11: Recommended System Power-up Timings
Symbol
Parameter
Minimum
100
Units
µs
1
TPU-READ
Power-up to Read Operation
Power-up to Program/Erase Operation
1
TPU-WRITE
100
µs
T11.0 1117
1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter.
TABLE 12: Capacitance (TA = 25°C, f=1 Mhz, other pins open)
Parameter
Description
Test Condition
VI/O = 0V
Maximum
1
CI/O
I/O Pin Capacitance
Input Capacitance
12 pF
6 pF
1
CIN
VIN = 0V
T12.0 1117
1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter.
TABLE 13: Reliability Characteristics
Symbol
Parameter
Endurance
Data Retention
Latch Up
Minimum Specification
Units
Cycles
Years
mA
Test Method
1,2
NEND
10,000
100
JEDEC Standard A117
JEDEC Standard A103
JEDEC Standard 78
1
TDR
1
ILTH
100 + IDD
T13.2 1117
1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter.
2. NEND endurance rating is qualified as a 10,000 cycle minimum for the whole device. A sector- or block-level rating would result in a
higher minimum specification.
©2007 Silicon Storage Technology, Inc.
S71117-09-000
2/07
12
SST [ SILICON STORAGE TECHNOLOGY, INC ]
