2 Mbit / 4 Mbit / 8 Mbit Multi-Purpose Flash
SST39LF200A / SST39LF400A / SST39LF800A
SST39VF200A / SST39VF400A / SST39VF800A
Data Sheet
TABLE 6: System Interface Information for SST39LF200A/400A/800A and SST39VF200A/400A/800A
Address
Data
Data
1BH
0027H1
0030H1
0036H
VDD Min (Program/Erase)
DQ7-DQ4: Volts, DQ3-DQ0: 100 millivolts
1CH
VDD Max (Program/Erase)
DQ7-DQ4: Volts, DQ3-DQ0: 100 millivolts
1DH
1EH
1FH
20H
21H
22H
23H
24H
25H
26H
0000H
0000H
0004H
0000H
0004H
0006H
0001H
0000H
0001H
0001H
VPP min (00H = no VPP pin)
VPP max (00H = no VPP pin)
Typical time out for Word-Program 2N µs (24 = 16 µs)
Typical time out for min size buffer program 2N µs (00H = not supported)
Typical time out for individual Sector/Block-Erase 2N ms (24 = 16 ms)
Typical time out for Chip-Erase 2N ms (26 = 64 ms)
Maximum time out for Word-Program 2N times typical (21 x 24 = 32 µs)
Maximum time out for buffer program 2N times typical
Maximum time out for individual Sector/Block-Erase 2N times typical (21 x 24 = 32 ms)
Maximum time out for Chip-Erase 2N times typical (21 x 26 = 128 ms)
T6.2 1117
1. 0030H for SST39LF200A/400A/800A and 0027H for SST39VF200A/400A/800A
TABLE 7: Device Geometry Information for SST39LF/VF200A
Address
27H
28H
Data
Data
0012H
0001H
0000H
0000H
Device size = 2N Byte (12H = 18; 218 = 256 KByte)
Flash Device Interface description; 0001H = x16-only asynchronous interface
29H
2AH
2BH
2CH
2DH
2EH
2FH
30H
31H
32H
33H
34H
Maximum number of bytes in multi-byte write = 2N (00H = not supported)
0002H
003FH
0000H
0010H
0000H
0003H
0000H
0000H
0001H
Number of Erase Sector/Block sizes supported by device
Sector Information (y + 1 = Number of sectors; z x 256B = sector size)
y = 63 + 1 = 64 sectors (003FH = 63)
z = 16 x 256 Bytes = 4 KByte/sector (0010H = 16)
Block Information (y + 1 = Number of blocks; z x 256B = block size)
y = 3 + 1 = 4 blocks (0003H = 3)
z = 256 x 256 Bytes = 64 KByte/block (0100H = 256)
T7.2 1117
©2007 Silicon Storage Technology, Inc.
S71117-09-000
2/07
9
SST [ SILICON STORAGE TECHNOLOGY, INC ]
