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SST34HF1682S-70-4E-B1SE 参数 Datasheet PDF下载

SST34HF1682S-70-4E-B1SE图片预览
型号: SST34HF1682S-70-4E-B1SE
PDF下载: 下载PDF文件 查看货源
内容描述: 16兆位并行的SuperFlash + 2/4/8兆位的SRAM ComboMemory [16 Mbit Concurrent SuperFlash + 2/4/8 Mbit SRAM ComboMemory]
分类和应用: 静态存储器
文件页数/大小: 38 页 / 482 K
品牌: SST [ SILICON STORAGE TECHNOLOGY, INC ]
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16 Mbit Concurrent SuperFlash + 2/4/8 Mbit SRAM ComboMemory  
SST34HF1602C / SST34HF1622C / SST34HF1642C  
SST34HF1642D / SST34HF1682D / SST34HF1622S / SST34HF1642S  
Advance Information  
Flash Write Operation Status Detection  
Flash Data# Polling (DQ7)  
The SST34HF16x2C/D/S provide one hardware and two  
software means to detect the completion of a Write (Pro-  
gram or Erase) cycle, in order to optimize the system  
Write cycle time. The hardware detection uses the  
Ready/Busy# (RY/BY#) pin. The software detection  
includes two status bits: Data# Polling (DQ7) and Toggle  
Bit (DQ6). The End-of-Write detection mode is enabled  
after the rising edge of WE#, which initiates the internal  
Program or Erase operation.  
When the devices are in an internal Program operation, any  
attempt to read DQ7 will produce the complement of the  
true data. Once the Program operation is completed, DQ7  
will produce true data. During internal Erase operation, any  
attempt to read DQ7 will produce a ‘0’. Once the internal  
Erase operation is completed, DQ7 will produce a ‘1’. The  
Data# Polling is valid after the rising edge of fourth WE# (or  
BEF#) pulse for Program operation. For Sector-, Block-, or  
Chip-Erase, the Data# Polling is valid after the rising edge  
of sixth WE# (or BEF#) pulse. See Figure 11 for Data# Poll-  
ing (DQ7) timing diagram and Figure 23 for a flowchart.  
The actual completion of the nonvolatile write is asynchro-  
nous with the system; therefore, either a Ready/Busy# (RY/  
BY#), Data# Polling (DQ7) or Toggle Bit (DQ6) read may be  
simultaneous with the completion of the Write cycle. If this  
occurs, the system may possibly get an erroneous result,  
i.e., valid data may appear to conflict with either DQ7 or  
DQ6. In order to prevent spurious rejection, if an erroneous  
result occurs, the software routine should include a loop to  
read the accessed location an additional two (2) times. If  
both reads are valid, then the device has completed the  
Write cycle, otherwise the rejection is valid.  
Toggle Bits (DQ6 and DQ2)  
During the internal Program or Erase operation, any con-  
secutive attempts to read DQ6 will produce alternating “1”s  
and “0”s, i.e., toggling between 1 and 0. When the internal  
Program or Erase operation is completed, the DQ6 bit will  
stop toggling. The device is then ready for the next opera-  
tion. The toggle bit is valid after the rising edge of the fourth  
WE# (or BEF#) pulse for Program operations. For Sector-,  
Block-, or Chip-Erase, the toggle bit (DQ6) is valid after the  
rising edge of sixth WE# (or BEF#) pulse. DQ6 will be set to  
“1” if a Read operation is attempted on an Erase-sus-  
pended Sector/Block. If Program operation is initiated in a  
sector/block not selected in Erase-Suspend mode, DQ6 will  
toggle.  
Ready/Busy# (RY/BY#)  
The SST34HF16x2C/D/S include a Ready/Busy# (RY/  
BY#) output signal. RY/BY# is an open drain output pin that  
indicates whether an Erase or Program operation is in  
progress. Since RY/BY# is an open drain output, it allows  
several devices to be tied in parallel to VDD via an external  
pull-up resistor. After the rising edge of the final WE# pulse  
in the command sequence, the RY/BY# status is valid.  
An additional Toggle Bit is available on DQ2, which can be  
used in conjunction with DQ6 to check whether a particular  
sector is being actively erased or erase-suspended. Table 1  
shows detailed status bit information. The Toggle Bit (DQ2)  
is valid after the rising edge of the last WE# (or BEF#)  
pulse of a Write operation. See Figure 12 for Toggle Bit tim-  
ing diagram and Figure 23 for a flowchart.  
When RY/BY# is actively pulled low, it indicates that an  
Erase or Program operation is in progress. When RY/BY#  
is high (Ready), the devices may be read or left in standby  
mode.  
TABLE 1: WRITE OPERATION STATUS  
Byte/Word (CIOF)  
Status  
DQ7  
DQ6  
DQ2  
RY/BY#  
The device includes a CIOF pin to control whether the  
device data I/O pins operate x8 or x16. If the CIOF pin is at  
logic “1” (VIH) the device is in x16 data configuration: all  
data I/0 pins DQ0-DQ15 are active and controlled by BEF#  
and OE#.  
Normal  
Operation Program  
Standard  
DQ7# Toggle No Toggle  
0
Standard  
Erase  
0
1
Toggle  
1
Toggle  
Toggle  
0
1
Erase-  
Suspend Erase  
Mode Suspended  
Read From  
If the CIOF pin is at logic “0”, the device is in x8 data config-  
uration: only data I/O pins DQ0-DQ7 are active and con-  
trolled by BEF# and OE#. The remaining data pins DQ8-  
DQ14 are at Hi-Z, while pin DQ15 is used as the address  
input A-1 for the Least Significant Bit of the address bus.  
Sector/Block  
Read From  
Non-Erase  
Suspended  
Sector/Block  
Data  
Data  
Data  
N/A  
1
Program  
DQ7# Toggle  
0
T1.0 1256  
Note: DQ7, DQ6, and DQ2 require a valid address when reading  
status information.  
©2004 Silicon Storage Technology, Inc.  
S71256-00-000  
3/04  
4
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