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SST34HF1682S-70-4E-B1SE 参数 Datasheet PDF下载

SST34HF1682S-70-4E-B1SE图片预览
型号: SST34HF1682S-70-4E-B1SE
PDF下载: 下载PDF文件 查看货源
内容描述: 16兆位并行的SuperFlash + 2/4/8兆位的SRAM ComboMemory [16 Mbit Concurrent SuperFlash + 2/4/8 Mbit SRAM ComboMemory]
分类和应用: 静态存储器
文件页数/大小: 38 页 / 482 K
品牌: SST [ SILICON STORAGE TECHNOLOGY, INC ]
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16 Mbit Concurrent SuperFlash + 2/4/8 Mbit SRAM ComboMemory  
SST34HF1602C / SST34HF1622C / SST34HF1642C  
SST34HF1642D / SST34HF1682D / SST34HF1622S / SST34HF1642S  
Advance Information  
Flash Word-/Byte-Program Operation  
Flash Chip-Erase Operation  
These devices are programmed on a word-by-word or  
byte-by-byte basis depending on the state of the CIOF pin.  
Before programming, one must ensure that the sector  
which is being programmed is fully erased.  
The SST34HF16x2C/D/S provide a Chip-Erase operation,  
which allows the user to erase all sectors/blocks to the “1”  
state. This is useful when the device must be quickly  
erased.  
The Program operation is accomplished in three steps:  
The Chip-Erase operation is initiated by executing a six-  
byte command sequence with Chip-Erase command (10H)  
at address 5555H in the last byte sequence. The Erase  
operation begins with the rising edge of the sixth WE# or  
BEF#, whichever occurs first. During the Erase operation,  
the only valid read is Toggle Bits or Data# Polling. See  
Table 7 for the command sequence, Figure 13 for timing  
diagram, and Figure 26 for the flowchart. Any commands  
issued during the Chip-Erase operation are ignored. When  
WP# is low, any attempt to Chip-Erase will be ignored.  
1. Software Data Protection is initiated using the  
three-byte load sequence.  
2. Word address and word data are loaded.  
During the Word-Program operation, the  
addresses are latched on the falling edge of either  
BEF# or WE#, whichever occurs last. The data is  
latched on the rising edge of either BEF# or WE#,  
whichever occurs first.  
3. The internal Program operation is initiated after  
the rising edge of the fourth WE# or BEF#, which-  
ever occurs first. The Program operation, once ini-  
tiated, will be completed typically within 7 µs.  
Flash Erase-Suspend/-Resume Operations  
The Erase-Suspend operation temporarily suspends a  
Sector- or Block-Erase operation thus allowing data to be  
read from any memory location, or program data into any  
sector/block that is not suspended for an Erase operation.  
The operation is executed by issuing a one-byte command  
sequence with Erase-Suspend command (B0H). The  
device automatically enters read mode within 20 µs after  
the Erase-Suspend command had been issued. Valid data  
can be read from any sector or block that is not suspended  
from an Erase operation. Reading at address location  
within erase-suspended sectors/blocks will output DQ2 tog-  
gling and DQ6 at “1”. While in Erase-Suspend mode, a  
Word-/Byte-Program operation is allowed except for the  
sector or block selected for Erase-Suspend. To resume  
Sector-Erase or Block-Erase operation which has been  
suspended, the system must issue an Erase-Resume  
command. The operation is executed by issuing a one-byte  
command sequence with Erase Resume command (30H)  
at any address in the one-byte sequence.  
See Figures 9 and 10 for WE# and BEF# controlled Pro-  
gram operation timing diagrams and Figure 22 for flow-  
charts. During the Program operation, the only valid reads  
are Data# Polling and Toggle Bit. During the internal Pro-  
gram operation, the host is free to perform additional tasks.  
Any commands issued during an internal Program opera-  
tion are ignored.  
Flash Sector- (Block-) Erase Operation  
These devices offer both Sector-Erase and Block-Erase  
operations. These operations allow the system to erase the  
devices on a sector-by-sector (or block-by-block) basis.  
The sector architecture is based on a uniform sector size of  
2 KWord. The Block-Erase mode is based on a uniform  
block size of 32 KWord. The Sector-Erase operation is initi-  
ated by executing a six-byte command sequence with a  
Sector-Erase command (30H) and sector address (SA) in  
the last bus cycle. The Block-Erase operation is initiated by  
executing a six-byte command sequence with Block-Erase  
command (50H) and block address (BA) in the last bus  
cycle. The sector or block address is latched on the falling  
edge of the sixth WE# pulse, while the command (30H or  
50H) is latched on the rising edge of the sixth WE# pulse.  
The internal Erase operation begins after the sixth WE#  
pulse. Any commands issued during the Block- or Sector-  
Erase operation are ignored except Erase-Suspend and  
Erase-Resume. See Figures 14 and 15 for timing wave-  
forms.  
©2004 Silicon Storage Technology, Inc.  
S71256-00-000  
3/04  
3
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