1.8V Serial Quad I/O (SQI) Flash Memory
SST26WF032
Advance Information
DC Characteristics
Table 12: DC Operating Characteristics (VDD = 1.65 - 1.95V)
Limits
Symbol Parameter
Min
Typ
Max
Units Test Conditions
IDDR
Read Current
12
18
mA
VDD=VDD Min,
CE#=0.1 VDD/0.9 VDD@80 MHz,
SO=open
IDDW
ISB1
ILI
Program and Erase Current
Standby Current
30
25
1
mA
µA
µA
µA
V
CE#=VDD
8
CE#=VDD, VIN=VDD or VSS
VIN=GND to VDD, VDD=VDD Max
VOUT=GND to VDD, VDD=VDD Max
VDD=VDD Min
Input Leakage Current
Output Leakage Current
Input Low Voltage
ILO
1
VIL
0.3
VIH
VOL
VOH
Input High Voltage
0.7 VDD
VDD-0.2
V
VDD=VDD Max
Output Low Voltage
Output High Voltage
0.2
V
IOL=100 µA, VDD=VDD Min
V
IOH=-100 µA, VDD=VDD Min
T12.0 1409
Table 13: Capacitance (TA = 25°C, f=1 Mhz, other pins open)
Parameter
Description
Test Condition
Maximum
12 pF
1
COUT
Output Pin Capacitance
Input Capacitance
VOUT = 0V
VIN = 0V
1
CIN
6 pF
T13.0 1409
1. This parameter is measured only for initial qualification and after a design or process change that could affect this
parameter.
Table 14: Reliability Characteristics
Symbol
Parameter
Endurance
Data Retention
Latch Up
Minimum Specification
Units
Test Method
1
NEND
10,000
100
Cycles JEDEC Standard A117
1
TDR
Years
mA
JEDEC Standard A103
JEDEC Standard 78
1
ILTH
100 + IDD
T14.0 1409
1. This parameter is measured only for initial qualification and after a design or process change that could affect this
parameter.
©2010 Silicon Storage Technology, Inc.
S71409-01-000
01/10
30
SST [ SILICON STORAGE TECHNOLOGY, INC ]
