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S34ML01G1 参数 Datasheet PDF下载

S34ML01G1图片预览
型号: S34ML01G1
PDF下载: 下载PDF文件 查看货源
内容描述: Spansion® SLC NAND闪存的嵌入式 [Spansion® SLC NAND Flash Memory for Embedded]
分类和应用: 闪存
文件页数/大小: 73 页 / 2766 K
品牌: SPANSION [ SPANSION ]
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Data
Sheet
(Pre limin ar y)
9. Error Management
9.1
System Bad Block Replacement
Over the lifetime of the device, additional Bad Blocks may develop. In this case, each bad block has to be
replaced by copying any valid data to a new block. These additional Bad Blocks can be identified whenever a
program or erase operation reports “Fail” in the Status Register.
The failure of a page program operation does not affect the data in other pages in the same block, thus the
block can be replaced by re-programming the current data and copying the rest of the replaced block to an
available valid block. Refer to
and
for the recommended procedure to follow if an error
occurs during an operation.
Table 9.1
Block Failure
Operation
Erase
Program
Read
Recommended Procedure
Block Replacement
Block Replacement
ECC (1 bit / 512+16 byte)
Figure 9.1
Bad Block Replacement
Block A
(2)
Data
Block B
Data
N page
th
Failure (1)
(3)
FFh
FFh
N page
th
buffer
memory of the controller
Notes:
1. An error occurs on the Nth page of Block A during a program operation.
2. Data in Block A is copied to the same location in Block B, which is a valid block.
3. The Nth page of block A, which is in controller buffer memory, is copied into the Nth page of Block B.
4. Bad block table should be updated to prevent from erasing or programming Block A.
68
Spansion
®
SLC NAND Flash Memory for Embedded
S34ML01G1_04G1_10 September 6, 2012