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S34ML01G1 参数 Datasheet PDF下载

S34ML01G1图片预览
型号: S34ML01G1
PDF下载: 下载PDF文件 查看货源
内容描述: Spansion® SLC NAND闪存的嵌入式 [Spansion® SLC NAND Flash Memory for Embedded]
分类和应用: 闪存
文件页数/大小: 73 页 / 2766 K
品牌: SPANSION [ SPANSION ]
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D a t a S h e e t ( P r e l i m i n a r y )  
9.2  
Bad Block Management  
Devices with Bad Blocks have the same quality level and the same AC and DC characteristics as devices  
where all the blocks are valid. A Bad Block does not affect the performance of valid blocks because it is  
isolated from the bit line and common source line by a select transistor. The devices are supplied with all the  
locations inside valid blocks erased (FFh). The Bad Block Information is written prior to shipping. Any block  
where the 1st byte in the spare area of the 1st or 2nd page does not contain FFh is a Bad Block. That is, if the  
first page has an FF value and should have been a non-FF value, then the non-FF value in the second page  
will indicate a bad block.The Bad Block Information must be read before any erase is attempted, as the Bad  
Block Information may be erased. For the system to be able to recognize the Bad Blocks based on the  
original information, it is recommended to create a Bad Block table following the flowchart shown in  
Figure 9.2. The host is responsible to detect and track bad blocks, both factory bad blocks and blocks that  
may go bad during operation. Once a block is found to be bad, data should not be written to that block.The 1st  
block, which is placed on 00h block address is guaranteed to be a valid block.  
Figure 9.2 Bad Block Management Flowchart  
Start  
Block Address=  
Block 0  
Increment  
Block Address  
Data(1)  
No  
Update  
Bad Block Table  
=FFh?  
Yes  
No  
Last  
Block?  
Yes  
End  
Note:  
1. Check FFh at 1st byte in the spare area of the 1st and 2nd page.  
September 6, 2012 S34ML01G1_04G1_10  
Spansion® SLC NAND Flash Memory for Embedded  
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