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S29GL128P90FFIR10 参数 Datasheet PDF下载

S29GL128P90FFIR10图片预览
型号: S29GL128P90FFIR10
PDF下载: 下载PDF文件 查看货源
内容描述: 3.0伏只页面模式闪存具有90纳米的MirrorBit工艺技术 [3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology]
分类和应用: 闪存存储
文件页数/大小: 77 页 / 2742 K
品牌: SPANSION [ SPANSION ]
 浏览型号S29GL128P90FFIR10的Datasheet PDF文件第51页浏览型号S29GL128P90FFIR10的Datasheet PDF文件第52页浏览型号S29GL128P90FFIR10的Datasheet PDF文件第53页浏览型号S29GL128P90FFIR10的Datasheet PDF文件第54页浏览型号S29GL128P90FFIR10的Datasheet PDF文件第56页浏览型号S29GL128P90FFIR10的Datasheet PDF文件第57页浏览型号S29GL128P90FFIR10的Datasheet PDF文件第58页浏览型号S29GL128P90FFIR10的Datasheet PDF文件第59页  
D a t a S h e e t ( P r e l i m i n a r y )  
11.6 DC Characteristics  
Table 11.2 S29GL-P DC Characteristics (CMOS Compatible)  
Parameter  
Symbol  
Parameter Description  
(Notes)  
Test Conditions  
IN = VSS to VCC  
Min  
Typ  
Max  
2.0  
1.0  
35  
Unit  
WP/ACC  
Others  
µA  
V
ILI  
Input Load Current (1)  
VCC = VCC max  
ILIT  
ILO  
A9 Input Load Current  
Output Leakage Current  
VCC = VCC max; A9 = 12.5 V  
µA  
µA  
VOUT = VSS to VCC , VCC = VCC max  
1.0  
20  
CE# = VIL, OE# = VIH, VCC = VCCmax, f = 1 MHz  
CE# = VIL, OE# = VIH, VCC = VCCmax, f = 5 MHz  
CE# = VIL, OE# = VIH, VCC = VCCmax, f = 10 MHz  
CE# = VIL, OE# = VIH  
6
30  
60  
0.2  
1
ICC1  
VCC Active Read Current (1)  
55  
mA  
110  
10  
IIO2  
VIO Non-Active Output  
mA  
mA  
CE# = VIL, OE# = VIH, VCC = VCCmax, f = 10 MHz  
CE# = VIL, OE# = VIH, VCC = VCCmax, f = 33 MHz  
10  
ICC2  
VCC Intra-Page Read Current (1)  
5
20  
VCC Active Erase/  
Program Current (2, 3)  
ICC3  
CE# = VIL, OE# = VIH, VCC = VCCmax  
50  
90  
mA  
µA  
CE#, RESET# = VCC 0.3 V,  
OE# = VIH, VCC = VCCmax  
ICC4  
VCC Standby Current  
1
5
VIL = VSS + 0.3 V/-0.1V,  
V
CC = VCCmax; VIL = VSS + 0.3 V/-0.1V,  
ICC5  
ICC6  
VCC Reset Current  
250  
1
500  
5
µA  
µA  
RESET# = VSS 0.3 V  
V
V
CC = VCCmax, VIH = VCC 0.3 V,  
Automatic Sleep Mode (4)  
IL = VSS + 0.3 V/-0.1V, WP#/ACC = VIH  
WP#/ACC  
pin  
10  
50  
20  
ACC Accelerated  
Program Current  
CE# = VIL, OE# = VIH,  
VCC = VCCmax, WP#/ACC = VHH  
IACC  
mA  
VCC pin  
80  
VIL  
VIH  
Input Low Voltage (5)  
Input High Voltage (5)  
–0.1  
0.7 x VIO  
11.5  
0.3 x VIO  
VIO + 0.3  
12.5  
V
V
V
VHH  
Voltage for Program Acceleration VCC = 2.7 –3.6 V  
Voltage for Autoselect and  
VCC = 2.7 –3.6 V  
VID  
11.5  
12.5  
V
Temporary Sector Unprotect  
VOL  
VOH  
VLKO  
Output Low Voltage (5)  
IOL = 100 µA  
IOH = -100 µA  
0.15 x VIO  
V
V
V
Output High Voltage (5)  
Low VCC Lock-Out Voltage (3)  
0.85 x VIO  
2.3  
2.5  
Notes  
1. The I current listed is typically less than 2 mA/MHz, with OE# at V  
.
CC  
IH  
2.  
3. Not 100% tested.  
4. Automatic sleep mode enables the lower power mode when addresses remain stable tor t  
I
active while Embedded Erase or Embedded Program or Write Buffer Programming is in progress.  
CC  
+ 30 ns.  
ACC  
5.  
6.  
V
V
= 1.65–3.6 V  
IO  
= 3 V and V = 3V or 1.8V. When V is at 1.8V, I/O pins cannot operate at 3V.  
CC  
IO  
IO  
November 8, 2007 S29GL-P_00_A7  
S29GL-P MirrorBit® Flash Family  
55  
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