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S29GL128P90FFIR10 参数 Datasheet PDF下载

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型号: S29GL128P90FFIR10
PDF下载: 下载PDF文件 查看货源
内容描述: 3.0伏只页面模式闪存具有90纳米的MirrorBit工艺技术 [3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology]
分类和应用: 闪存存储
文件页数/大小: 77 页 / 2742 K
品牌: SPANSION [ SPANSION ]
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D a t a S h e e t ( P r e l i m i n a r y )  
„ Once the Secured Silicon Sector is locked and verified, the system must write the Exit Secured Silicon  
Sector Region command sequence which return the device to the memory array at sector 0.  
10.3 Secured Silicon Sector Entry/Exit Command Sequences  
The system can access the Secured Silicon Sector region by issuing the three-cycle Enter Secured Silicon  
Sector command sequence. The device continues to access the Secured Silicon Sector region until the  
system issues the four-cycle Exit Secured Silicon Sector command sequence.  
See Command Definitions on page 67 [Secured Silicon Sector Command Table, Appendix  
Table 12.1 on page 68 through Table 12.4 on page 71 for address and data requirements for both command  
sequences.  
The Secured Silicon Sector Entry Command allows the following commands to be executed  
„ Read customer and factory Secured Silicon areas  
„ Program the customer Secured Silicon Sector  
After the system has written the Enter Secured Silicon Sector command sequence, it may read the Secured  
Silicon Sector by using the addresses normally occupied by sector SA0 within the memory array. This mode  
of operation continues until the system issues the Exit Secured Silicon Sector command sequence, or until  
power is removed from the device.  
Software Functions and Sample Code  
The following are C functions and source code examples of using the Secured Silicon Sector Entry, Program,  
and exit commands. Refer to the Spansion Low Level Driver User’s Guide (available soon on  
www.spansion.com) for general information on Spansion Flash memory software development guidelines.  
Table 10.2 Secured Silicon Sector Entry  
(LLD Function = lld_SecSiSectorEntryCmd)  
Cycle  
Operation  
Write  
Byte Address  
Base + AAAh  
Base + 555h  
Base + AAAh  
Word Address  
Base + 555h  
Base + 2AAh  
Base + 555h  
Data  
00AAh  
0055h  
0088h  
Unlock Cycle 1  
Unlock Cycle 2  
Entry Cycle  
Write  
Write  
Note  
Base = Base Address.  
/* Example: SecSi Sector Entry Command */  
*( (UINT16 *)base_addr + 0x555 ) = 0x00AA;  
*( (UINT16 *)base_addr + 0x2AA ) = 0x0055;  
*( (UINT16 *)base_addr + 0x555 ) = 0x0088;  
/* write unlock cycle 1  
*/  
*/  
*/  
/* write unlock cycle 2  
/* write Secsi Sector Entry Cmd  
Table 10.3 Secured Silicon Sector Program  
(LLD Function = lld_ProgramCmd)  
Cycle  
Operation  
Write  
Byte Address  
Base + AAAh  
Base + 555h  
Base + AAAh  
Word Address  
Word Address  
Base + 555h  
Base + 2AAh  
Base + 555h  
Word Address  
Data  
00AAh  
Unlock Cycle 1  
Unlock Cycle 2  
Program Setup  
Program  
Write  
0055h  
Write  
00A0h  
Write  
Data Word  
Note  
Base = Base Address.  
/* Once in the SecSi Sector mode, you program */  
/* words using the programming algorithm. */  
November 8, 2007 S29GL-P_00_A7  
S29GL-P MirrorBit® Flash Family  
51  
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