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S29GL128P90FFIR10 参数 Datasheet PDF下载

S29GL128P90FFIR10图片预览
型号: S29GL128P90FFIR10
PDF下载: 下载PDF文件 查看货源
内容描述: 3.0伏只页面模式闪存具有90纳米的MirrorBit工艺技术 [3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology]
分类和应用: 闪存存储
文件页数/大小: 77 页 / 2742 K
品牌: SPANSION [ SPANSION ]
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D a t a S h e e t ( P r e l i m i n a r y )  
11.7 AC Characteristics  
11.7.1  
S29GL-P Read-Only Operations  
Table 11.3 S29GL-P Read-Only Operations  
Parameter  
Speed Options  
Description  
(Notes)  
JEDEC  
Std.  
Test Setup  
IO = VCC = 2.7 V  
VIO = 1.65 V to VCC  
90  
100 110 120 130 Unit  
V
100 110 120  
,
tAVAV  
tRC  
Read Cycle Time  
Min  
Max  
Max  
110 120 130  
ns  
ns  
ns  
VCC = 3 V  
VIO = VCC = 3.0 V  
90  
100 110  
V
IO = VCC = 2.7 V  
100 110 120  
VIO = 1.65 V to VCC  
,
tAVQV  
tACC Address to Output Delay (1)  
110 120 130  
VCC = 3 V  
VIO = VCC = 3.0 V  
90  
100 110  
V
IO = VCC = 2.7 V  
100 110 120  
VIO = 1.65 V to VCC  
,
tELQV  
tCE  
Chip Enable to Output Delay (2)  
110 120 130  
VCC = 3 V  
VIO = VCC = 3.0 V  
90  
100 110  
tPACC Page Access Time  
Max  
Max  
Max  
Max  
25  
25  
20  
20  
ns  
ns  
ns  
ns  
tGLQV  
tEHQZ  
tGHQZ  
tOE  
tDF  
tDF  
Output Enable to Output Delay  
Chip Enable to Output High Z (3)  
Output Enable to Output High Z (3)  
Output Hold Time From Addresses, CE# or  
OE#, Whichever Occurs First  
tAXQX  
tOH  
Min  
Min  
Min  
Min  
0
0
ns  
ns  
ns  
ns  
Read  
Output Enable Hold Time  
tOEH  
Toggle and  
(3)  
10  
35  
Data# Polling  
tCEH Chip Enable Hold Time  
Read  
Notes  
1. CE#, OE# = V  
IL  
2. OE# = V  
IL  
3. Not 100% tested.  
4. See Figure 11.3 and Table 11.1 for test specifications.  
5. Unless otherwise indicated, AC specifications for 110 ns speed options are tested with V = V = 2.7 V. AC specifications for 110 ns speed options are tested  
IO  
CC  
with V = 1.8 V and V = 3.0 V.  
IO  
CC  
56  
S29GL-P MirrorBit® Flash Family  
S29GL-P_00_A7 November 8, 2007  
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