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S29GL128P90FAIR12 参数 Datasheet PDF下载

S29GL128P90FAIR12图片预览
型号: S29GL128P90FAIR12
PDF下载: 下载PDF文件 查看货源
内容描述: 3.0伏只页面模式闪存具有90纳米的MirrorBit工艺技术 [3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology]
分类和应用: 闪存
文件页数/大小: 77 页 / 2742 K
品牌: SPANSION [ SPANSION ]
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D a t a S h e e t ( P r e l i m i n a r y )  
Table 12.1 S29GL-P Memory Array Command Definitions, x16  
Bus Cycles (Notes 15)  
First  
Addr  
Second  
Third  
Fourth  
Fifth  
Addr  
Sixth  
Command (Notes)  
Data  
RD  
F0  
Addr  
Data  
Addr  
Data  
Addr  
Data  
Data  
Addr  
Data  
Read (6)  
Reset (7)  
1
1
4
4
4
RA  
XXX  
555  
555  
555  
Manufacturer ID  
AA  
AA  
AA  
2AA  
2AA  
2AA  
55  
55  
55  
555  
555  
555  
90  
90  
90  
X00  
X01  
01  
Device ID (8)  
227E  
(10)  
X0E  
(8)  
X0F  
(8)  
Sector Protect Verify (10)  
[SA]X02  
Secure Device Verify (11)  
4
555  
AA  
2AA  
55  
555  
90  
X03  
(11)  
CFI Query (12)  
1
4
3
1
3
3
2
2
2
2
6
6
1
1
3
4
55  
98  
AA  
AA  
29  
Program  
555  
555  
SA  
2AA  
2AA  
55  
55  
555  
SA  
A0  
25  
PA  
SA  
PD  
Write to Buffer  
WC  
WBL  
PD  
WBL  
PD  
Program Buffer to Flash (Confirm)  
Write-to-Buffer-Abort Reset (13)  
Enter  
555  
555  
XXX  
XXX  
XXX  
XXX  
555  
555  
XXX  
XXX  
555  
555  
AA  
AA  
A0  
80  
2AA  
2AA  
PA  
55  
55  
PD  
30  
10  
00  
55  
55  
555  
555  
F0  
20  
Program (14)  
Sector Erase (14)  
SA  
Chip Erase (14)  
80  
XXX  
XXX  
2AA  
2AA  
Reset (15)  
90  
Chip Erase  
AA  
AA  
B0  
30  
555  
555  
80  
80  
555  
555  
AA  
AA  
2AA  
2AA  
55  
55  
555  
SA  
10  
30  
Sector Erase  
Erase Suspend/Program Suspend (16)  
Erase Resume/Program Resume (17)  
Secured Silicon Sector Entry  
Secured Silicon Sector Exit (18)  
AA  
AA  
2AA  
2AA  
55  
55  
555  
555  
88  
90  
XX  
00  
Legend  
X = Don’t care  
RA = Address of the memory to be read.  
PD = Data to be programmed at location PA. Data latches on the rising edge  
of the WE# or CE# pulse, whichever happens first.  
RD = Data read from location RA during read operation.  
SA = Address of the sector to be verified (in autoselect mode) or erased.  
PA = Address of the memory location to be programmed. Addresses latch on  
the falling edge of the WE# or CE# pulse, whichever happens later.  
Address bits A  
–A16 uniquely select any sector.  
max  
WBL = Write Buffer Location. The address must be within the same write  
buffer page as PA.  
WC = Word Count is the number of write buffer locations to load minus 1.  
Notes  
1. See Table 7.1 on page 19 for description of bus operations.  
11. The data value for DQ7 is “1” for a serialized, protected Secured Silicon  
Sector region and “0” for an unserialized, unprotected region. See  
Table 7.3 on page 22 for data and definitions.  
2. All values are in hexadecimal.  
3. All bus cycles are write cycles unless otherwise noted.  
4. Data bits DQ15-DQ8 are don’t cares for unlock and command cycles.  
12. Command is valid when device is ready to read array data or when device  
is in autoselect mode.  
5. Address bits A  
:A16 are don’t cares for unlock and command cycles,  
MAX  
13. Command sequence returns device to reading array after being placed in  
a Write-to-Buffer-Abort state. Full command sequence is required if  
resetting out of abort while in Unlock Bypass mode.  
unless SA or PA required. (A  
is the Highest Address pin.).  
MAX  
6. No unlock or command cycles required when reading array data.  
7. The Reset command is required to return to reading array data when  
device is in the autoselect mode, or if DQ5 goes high (while the device is  
providing status data).  
14. The Unlock-Bypass command is required prior to the Unlock-Bypass-  
Program command.  
15. The Unlock-Bypass-Reset command is required to return to reading array  
data when the device is in the unlock bypass mode.  
8. See Table 7.2 on page 22 for device ID values and definitions.  
9. The fourth, fifth, and sixth cycles of the autoselect command sequence are  
read cycles.  
16. The system can read and program/program suspend in non-erasing  
sectors, or enter the autoselect mode, when in the Erase Suspend mode.  
The Erase Suspend command is valid only during a sector erase  
operation.  
10. The data is 00h for an unprotected sector and 01h for a protected sector.  
See Autoselect on page 21 for more information. This is same as PPB  
Status Read except that the protect and unprotect statuses are inverted  
here.  
17. The Erase Resume/Program Resume command is valid only during the  
Erase Suspend/Program Suspend modes.  
18. The Exit command returns the device to reading the array.  
68  
S29GL-P MirrorBit® Flash Family  
S29GL-P_00_A7 November 8, 2007