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S29GL256N10FFI010 参数 Datasheet PDF下载

S29GL256N10FFI010图片预览
型号: S29GL256N10FFI010
PDF下载: 下载PDF文件 查看货源
内容描述: 的MirrorBit闪存系列 [MirrorBit Flash Family]
分类和应用: 闪存存储内存集成电路
文件页数/大小: 110 页 / 1430 K
品牌: SPANSION [ SPANSION ]
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A d v a n c e I n f o r m a t i o n  
Test Conditions  
Note: Diodes are IN3064 or equivalent  
3.3 V  
Table 15. Test Specifications  
Test Condition  
All Speeds  
1 TTL gate  
Unit  
2.7 kΩ  
Device  
Under  
Test  
Output Load  
Output Load Capacitance, CL  
(including jig capacitance)  
30  
pF  
C
L
6.2 kΩ  
Input Rise and Fall Times  
Input Pulse Levels  
5
ns  
V
0.0–VIO  
Input timing measurement  
reference levels (See Note)  
0.5VIO  
V
V
Note: Diodes are IN3064 or equivalent.  
Output timing measurement  
reference levels  
0.5 VIO  
Figure 9. Test Setup  
Note: If VIO < VCC, the reference level is 0.5 VIO  
.
Key to Switching Waveforms  
WAVEFORM  
INPUTS  
OUTPUTS  
Steady  
Changing from H to L  
Changing from L to H  
Don’t Care, Any Change Permitted  
Does Not Apply  
Changing, State Unknown  
Center Line is High Impedance State (High Z)  
VIO  
0.5 VIO  
0.5 VIO V  
Input  
Measurement Level  
Output  
0.0 V  
Note: If VIO < VCC, the input measurement reference level is 0.5 VIO  
.
Figure 10. Input Waveforms and  
Measurement Levels  
May 13, 2004 27631A4  
S29GLxxxN MirrorBitTM Flash Family  
87  
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