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S29GL128N11TAIV10 参数 Datasheet PDF下载

S29GL128N11TAIV10图片预览
型号: S29GL128N11TAIV10
PDF下载: 下载PDF文件 查看货源
内容描述: 3.0伏只页面模式闪存具有110纳米MirrorBit⑩工艺技术 [3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit⑩ Process Technology]
分类和应用: 闪存
文件页数/大小: 100 页 / 2678 K
品牌: SPANSION [ SPANSION ]
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D a t a S h e e t  
Operation Timings.............................................................. 86  
Erase And Programming Performance . . . . . . . . 87  
TSOP Pin and BGA Package Capacitance . . . . . 87  
Physical Dimensions . . . . . . . . . . . . . . . . . . . . . . . 88  
TS056—56-Pin Standard Thin Small Outline Package (TSOP) .............88  
LAA064—64-Ball Fortified Ball Grid Array (FBGA) ...............................89  
Advance Information on S29GL-P Hardware Reset  
(RESET#) and Power-up Sequence . . . . . . . . . . . 90  
Table 18. Hardware Reset (RESET#) ....................................90  
Figure 21. Reset Timings .................................................... 90  
Table 19. Power-Up Sequence Timings .................................91  
Figure 22. Power-On Reset Timings...................................... 91  
Read-Only Operations ......................................................................................77  
Figure 11. Read Operation Timings....................................... 78  
Figure 12. Page Read Timings.............................................. 78  
Hardware Reset (RESET#) ...............................................................................79  
Figure 13. Reset Timings..................................................... 79  
Erase and Program Operations .....................................................................80  
Figure 14. Program Operation Timings.................................. 81  
Figure 15. Accelerated Program Timing Diagram .................... 81  
Figure 16. Chip/Sector Erase Operation Timings..................... 82  
Figure 17. Data# Polling Timings  
(During Embedded Algorithms)............................................ 83  
Figure 18. Toggle Bit Timings (During Embedded Algorithms) .. 84  
Figure 19. DQ2 vs. DQ6 ...................................................... 84  
Alternate CE# Controlled Erase and Program Operations-  
Revision Summary . . . . . . . . . . . . . . . . . . . . . . . . . 92  
S29GL128N, S29GL256N, S29GL512N ......................................................... 85  
Figure 20. Alternate CE# Controlled Write (Erase/Program)  
October 13, 2006 S29GL-N_00B3  
S29GL-N MirrorBit™ Flash Family  
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