S29GL-N
MirrorBit™ Flash Family
S29GL512N, S29GL256N, S29GL128N
512 Megabit, 256 Megabit, and 128 Megabit,
3.0 Volt-only Page Mode Flash Memory featuring
110 nm MirrorBit™ Process Technology
Data Sheet
Distinctive Characteristics
Package options
Architectural Advantages
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—
56-pin TSOP
64-ball Fortified BGA
Single power supply operation
3 volt read, erase, and program operations
Enhanced VersatileI/O™ control
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Software & Hardware Features
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All input levels (address, control, and DQ input levels)
and outputs are determined by voltage on VIO input.
Software features
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—
Program Suspend and Resume: read other sectors
before programming operation is completed
Erase Suspend and Resume: read/program other
sectors before an erase operation is completed
Data# polling and toggle bits provide status
Unlock Bypass Program command reduces overall
multiple-word programming time
V
IO range is 1.65 to VCC
Manufactured on 110 nm MirrorBit process
technology
Secured Silicon Sector region
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—
—
128-word/256-byte sector for permanent, secure
identification through an 8-word/16-byte random
Electronic Serial Number, accessible through a
command sequence
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CFI (Common Flash Interface) compliant: allows host
system to identify and accommodate multiple flash
devices
—
May be programmed and locked at the factory or by
the customer
Hardware features
Flexible sector architecture
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—
Advanced Sector Protection
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—
S29GL512N: Five hundred twelve 64 Kword (128
Kbyte) sectors
WP#/ACC input accelerates programming time
(when high voltage is applied) for greater throughput
during system production. Protects first or last sector
regardless of sector protection settings
Hardware reset input (RESET#) resets device
Ready/Busy# output (RY/BY#) detects program or
erase cycle completion
S29GL256N: Two hundred fifty-six 64 Kword (128
Kbyte) sectors
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—
S29GL128N: One hundred twenty-eight 64 Kword
(128 Kbyte) sectors
Compatibility with JEDEC standards
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Provides pinout and software compatibility for
single-power supply flash, and superior inadvertent
write protection
Product Availability Table
Density
Init. Access
110 ns
100 ns
110 ns
100 ns
90 ns
V
Availability
Now
CC
100,000 erase cycles per sector typical
20-year data retention typical
Full
Full
512 Mb
256 Mb
Now
Performance Characteristics
Full
Now
High performance
Full
Now
—
—
—
—
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90 ns access time (S29GL128N, S29GL256N)
100 ns (S29GL512N)
8-word/16-byte page read buffer
25 ns page read times
16-word/32-byte write buffer reduces overall
programming time for multiple-word updates
Regulated
Full
Now
110 ns
100 ns
90 ns
Now
128 Mb
Full
Now
Regulated
Now
Low power consumption (typical values at 3.0 V, 5
MHz)
—
—
—
25 mA typical active read current;
50 mA typical erase/program current
1 µA typical standby mode current
Publication Number S29GL-N_00 Revision B Amendment 3 Issue Date October 13, 2006
SPANSION [ SPANSION ]
