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S29GL128N11TAIV10 参数 Datasheet PDF下载

S29GL128N11TAIV10图片预览
型号: S29GL128N11TAIV10
PDF下载: 下载PDF文件 查看货源
内容描述: 3.0伏只页面模式闪存具有110纳米MirrorBit⑩工艺技术 [3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit⑩ Process Technology]
分类和应用: 闪存
文件页数/大小: 100 页 / 2678 K
品牌: SPANSION [ SPANSION ]
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D a t a S h e e t  
Table 10. Device Geometry Definition  
Addresses (x16)  
Addresses (x8)  
Data  
Description  
001Ah  
0019h  
0018h  
Device Size = 2N byte  
27h  
4Eh  
1A = 512 Mb, 19 = 256 Mb, 18 = 128 Mb  
28h  
29h  
50h  
52h  
0002h  
0000h  
Flash Device Interface description (refer to CFI publication 100)  
2Ah  
2Bh  
54h  
56h  
0005h  
0000h  
Max. number of byte in multi-byte write = 2N  
(00h = not supported)  
Number of Erase Block Regions within device (01h = uniform device,  
02h = boot device)  
2Ch  
58h  
0001h  
Erase Block Region 1 Information  
2Dh  
2Eh  
2Fh  
30h  
5Ah  
5Ch  
5Eh  
60h  
00xxh  
000xh  
0000h  
000xh  
(refer to the CFI specification or CFI publication 100)  
00FFh, 001h, 0000h, 0002h = 512 Mb  
00FFh, 0000h, 0000h, 0002h = 256 Mb  
007Fh, 0000h, 0000h, 0002h = 128 Mb  
31h  
32h  
33h  
34h  
62h  
64h  
66h  
68h  
0000h  
0000h  
0000h  
0000h  
Erase Block Region 2 Information (refer to CFI publication 100)  
Erase Block Region 3 Information (refer to CFI publication 100)  
Erase Block Region 4 Information (refer to CFI publication 100)  
35h  
36h  
37h  
38h  
6Ah  
6Ch  
6Eh  
70h  
0000h  
0000h  
0000h  
0000h  
39h  
3Ah  
3Bh  
3Ch  
72h  
74h  
76h  
78h  
0000h  
0000h  
0000h  
0000h  
48  
S29GL-N MirrorBit™ Flash Family  
S29GL-N_00_B3 October 13, 2006